Semiconductor device and semiconductor device manufacturing method
First Claim
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1. A semiconductor device employing a thin film transistor, the thin film transistor comprising:
- a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes.
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Abstract
This invention is intended to provide a technique for improving characteristics of a TFT and realizing a structure of the TFT optimum for driving conditions of a pixel section and a driving circuit by using a small number of photomasks. The TFT includes a first electrode, a first insulating film put between a semiconductor film and the first electrode, a second electrode, and a second insulating film put between the semiconductor film and the second electrode. The first electrode and the second electrode are overlapped with each other, with a channel formation region of the semiconductor film put between the first electrode and the second electrode, and a constant voltage is always applied to the first electrode.
78 Citations
130 Claims
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1. A semiconductor device employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes. - View Dependent Claims (2, 3, 13, 16, 19, 22, 25, 26, 27, 28, 30, 31, 32, 33, 34, 35, 36, 37, 38, 40, 41, 42, 43, 44, 45, 46, 47, 48, 50, 51, 52, 53, 54, 55, 56, 57, 58, 60, 61, 62, 63, 64, 65, 66, 67, 68, 70, 71, 72, 73, 74, 75, 76, 77, 78, 80, 81, 82, 83, 84, 85, 86, 87, 88, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99)
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4. A semiconductor device comprising:
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a thin film transistor; and
a liquid crystal cell;
said thin film transistor comprising;
a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode with said channel formation region between said first and second electrodes, said liquid crystal cell comprising;
a pixel electrode;
an opposed electrode; and
a liquid crystal provided between said pixel electrode and said opposed electrode, wherein said thin film transistor controls input of a video signal into said pixel electrode. - View Dependent Claims (5, 6, 14, 17, 20, 23)
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7. A semiconductor device comprising:
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a first thin film transistor;
a second thin film transistor; and
an OLED, each of said first and second thin film transistors comprising;
a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, and said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, said OLED comprising;
a third electrode;
a fourth electrode; and
an organic light emitting layer provided between said third electrode and said fourth electrode;
said first thin film transistor controls input of a video signal into said second electrode of said second thin film transistor; and
a drain current is inputted into said third electrode. - View Dependent Claims (8, 9, 10, 11, 12, 15, 18, 21, 24)
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29. A semiconductor device comprising:
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a first thin film transistor;
a second thin film transistor; and
an OLED, each of said first and second thin film transistors comprising;
a first electrode;
a first insulating film formed to contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, and wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, said OLED comprising;
a third electrode;
a fourth electrode; and
an organic light emitting layer provided between said third electrode and said fourth electrode;
said first thin film transistor controls input of a video signal into said second electrode of said second thin film transistor;
a drain current is inputted into said third electrode; and
said first and second electrodes of said second thin film transistor are electrically connected to each other.
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39. A semiconductor device comprising:
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a first thin film transistor;
a second thin film transistor, each of said first and second thin film transistors comprising;
a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, and said first electrode of said second thin film transistor is electrically connected to said second electrode of said second thin film transistor.
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49. A semiconductor device comprising:
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a first thin film transistor;
a second thin film transistor, each of said first and second thin film transistors comprising;
a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, and said first electrode of said second thin film transistor is connected to said second electrode of said second thin film transistor through a contact hole provided in said first insulating film and said second insulating film of said second thin film transistor.
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59. A semiconductor device comprising:
first and second thin film transistors each including;
a first electrode, a first insulating film provided in contact with said first electrode, a semiconductor film provided in contact with said first insulating film, a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film, and a second electrode provided in contact with said second insulating film;
a third insulating film provided over said second insulating film to cover said second electrode; and
a wiring provided over said third insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, and said wiring contacts with said first electrode of said second thin film transistor through a second contact hole provided in said first insulating film and said second insulating film, and contacts with said second electrode of said second thin film transistor through a first contact hole provided in said third insulating film.
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69. A semiconductor device comprising:
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a pixel section including a first thin film transistor and a liquid crystal cell; and
a driving circuit including a second thin film transistor, each of said first and second thin film transistors comprising;
a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, said liquid crystal cell comprising;
a pixel electrode;
an opposed electrode; and
a liquid crystal provided between said pixel electrode and said opposed electrode, wherein said first thin film transistor controls input of a video signal, generated in said driving circuit, into said pixel electrode, and said first electrode and said second electrode of said second thin film transistor are electrically connected to each other.
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79. A semiconductor device comprising:
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a pixel section including a first thin film transistor and a liquid crystal cell; and
a driving circuit including a second thin film transistor, each of said first and second thin film transistors comprising;
a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, said liquid crystal cell comprising;
a pixel electrode;
an opposed electrode; and
a liquid crystal provided between said pixel electrode and said opposed electrode, said first thin film transistor controls input of a video signal, generated in said driving circuit, into said pixel electrode, and said first electrode and said second electrode of said second thin film transistor are connected to each other through a contact hole provided in said first insulating film and said second insulating film.
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89. A semiconductor device comprising:
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a pixel section including a first thin film transistor, a second thin film transistor, and an OLED; and
a driving circuit including a third thin film transistor, each of said first, second and third film transistors comprising;
a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode formed to contact with said second insulating film, andwherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, said OLED comprising;
a third electrode;
a fourth electrode; and
an organic light emitting layer provided between said third electrode and said fourth electrode, said first thin film transistor controls input of a video signal into said second electrode of said second thin film transistor, a drain current of said second thin film transistor is controlled by the video signal inputted into said second electrode, said drain current is inputted into said third electrode; and
said first electrode and said second electrode of each of said second and third thin film transistors are electrically connected to each other.
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100. A semiconductor device comprising:
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a pixel section including a first thin film transistor, a second thin film transistor, and an OLED; and
a driving circuit including a third thin film transistor, each of said first, second and third thin film transistors comprising;
a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes, said OLED comprising;
a third electrode;
a fourth electrode; and
an organic light emitting layer provided between said third electrode and said fourth electrode, said first thin film transistor controls input of a video signal into said second electrode of said second thin film transistor, and a drain current of said second thin film transistor is controlled by the video signal inputted into said second electrode, said drain current is inputted into said third electrode, and said first electrode and said second electrode of each of said second and third thin film transistors are connected to each other through a contact hole formed in said first insulating film and said second insulating film. - View Dependent Claims (101, 102, 103, 104, 105, 106, 107, 108, 109, 110)
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111. A display device employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes. - View Dependent Claims (120, 121, 123, 124, 126, 127, 129, 130)
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112. A digital still camera employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes.
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113. A notebook type personal computer employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes.
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114. A mobile computer employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes.
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115. An image reproducing device employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes.
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116. A goggle type display employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes.
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117. A video camera employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes.
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118. A cellular telephone employing a thin film transistor, the thin film transistor comprising:
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a first electrode;
a first insulating film provided in contact with said first electrode;
a semiconductor film provided in contact with said first insulating film;
a channel formation region provided in said semiconductor film;
a second insulating film provided in contact with said semiconductor film; and
a second electrode provided in contact with said second insulating film, wherein said first electrode is overlapped with said second electrode, with said channel formation region between said first and second electrodes.
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119. A semiconductor device manufacturing method comprising:
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forming a first electrode and a second electrode over an insulating surface;
forming a first insulating film contacting with said first electrode and said second electrode;
forming a first semiconductor film and a second semiconductor film both contacting with said first insulating film;
forming a second insulating film contacting with said first semiconductor film and said second semiconductor film;
etching said first insulating film and said second insulating film, and exposing a part of said first electrode; and
forming a third electrode contacting with said second insulating film and contacting with a part of said first electrode, and forming a fourth electrode contacting with said second insulating film, wherein said first electrode is overlapped with said third electrode, with said first semiconductor film between said first electrode and said third electrode, and said second electrode is overlapped with said fourth electrode, with said second semiconductor film between said second electrode and said fourth electrode.
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122. A semiconductor device manufacturing method comprising:
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forming a first electrode and a second electrode over an insulating surface;
forming a first insulating film contacting with said first electrode and said second electrode;
flattening said first insulating film by chemical-mechanical polishing;
forming a first semiconductor film and a second semiconductor film both contacting with said flattened first insulating film;
forming a second insulating film contacting with said first semiconductor film and said second semiconductor film;
etching said flattened first insulating film and said second insulating film, and exposing a part of said first electrode; and
forming a third electrode contacting with said second insulating film and contacting with apart of said first electrode, and forming a fourth electrode contacting with said second insulating film, wherein said first electrode is overlapped with said third electrode, with said first semiconductor film put between said first electrode and said third electrode, and said second electrode is overlapped with said fourth electrode, with said second semiconductor film between said second electrode and said fourth electrode.
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125. A semiconductor device manufacturing method comprising:
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forming a first electrode and a second electrode over an insulating surface;
forming a first insulating film contacting with said first electrode and said second electrode;
forming a first semiconductor film and a second semiconductor film both contacting with said first insulating film;
forming a second insulating film contacting with said first semiconductor film and said second semiconductor film;
forming a third electrode and a fourth electrode both contacting with said second insulating film;
forming a third insulating film covering said third electrode and said fourth electrode and contacting with said second insulating film;
etching said first insulating film, said second insulating film and said third insulating film, and exposing a part of said first electrode and a part of said third electrode; and
forming a wiring contacting with a part of said first electrode and a part of said third electrode, wherein said first electrode is overlapped with said third electrode, with said first semiconductor film between said first electrode and said third electrode, and said second electrode is overlapped with said fourth electrode, with said second semiconductor film between said second electrode and said fourth electrode.
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128. A semiconductor device manufacturing method comprising the steps of:
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forming a first electrode and a second electrode over an insulating surface;
forming a first insulating film contacting with said first electrode and said second electrode;
flattening said first insulating film by chemical-mechanical polishing;
forming a first semiconductor film and a second semiconductor film both contacting with said flattened first insulating film;
forming a second insulating film contacting with said first semiconductor film and said second semiconductor film;
forming a third electrode and a fourth electrode both contacting with said second insulating film;
forming a third insulating film covering said third electrode and said fourth electrode, and contacting with said second insulating film;
etching said flattened first insulating film, said second insulating film and said third insulating film, and exposing a part of said first electrode and a part of said third electrode; and
forming a wiring contacting with a part of said first electrode and a part of said third electrode, wherein said first electrode is overlapped with said third electrode, with said first semiconductor film between said first electrode and said third electrode, and said second electrode is overlapped with said fourth electrode, with said second semiconductor film between said second electrode and said fourth electrode.
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsOsada, Mai, Tsunoda, Akira, Koyama, Jun, Yamazaki, Shunpei
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/347
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CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/124 with a particular compositi...H01L 29/42384 for thin film field effect ...H01L 29/6675 Amorphous silicon or polysi...H01L 29/78621 with LDD structure or an ex...H01L 29/78648 arranged on opposing sides ...
