Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus

• US 20020150791A1
• Filed: 02/01/2002
• Published: 10/17/2002
• Est. Priority Date: 02/01/2001
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yoshikawa, Masatoshi, Yuasa, Hiromi, Sahashi, Masashi, Iwasaki, Hitoshi, Kamiguchi, Yuzo
• Granted Patent: US 6,905,780 B2
• Time in Patent Office: Days
• US Class Current: 428/692
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/012 Recording on, or reproducing or erasing from, magnetic disks G11B17/00, G11B19/00 take precedence
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3906 Details related to the use of magnetic thin film layers or to their effects
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/324 Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H10N 50/85 Magnetic active materials
• CPC Class Codes: Y10T 428/1107 Magnetoresistive
• CPC Class Codes: Y10T 428/1121 Multilayer
• CPC Class Codes: Y10T 428/1129 Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
• CPC Class Codes: Y10T 428/1143 with defined structural feature
• CPC Class Codes: Y10T 428/115 Magnetic layer composition
• CPC Class Codes: Y10T 428/1171 with defined laminate structural detail
• CPC Class Codes: Y10T 428/1193 with interlaminar component [e.g., adhesion layer, etc.]
• CPC Class Codes: Y10T 428/12465 having magnetic properties, or preformed fiber orientation coordinate with shape
• CPC Class Codes: Y10T 428/12868 Group IB metal-base component alternative to platinum group metal-base component [e.g., precious metal, etc.]
• CPC Class Codes: Y10T 428/12917 Next to Fe-base component
• CPC Class Codes: Y10T 428/12951 : Fe-base component
• CPC Class Codes: Y10T 428/265 : 1 mil or less
• CPC Class Codes: Y10T 428/32 : Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer

Abstract

A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula Fe_aCo_bNi_c (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.

Claims

1. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary alloy or a ternary alloy represented by general formula (1) or (2) given below;

T1_aT2_b 

 

(1)Fe_cCo_dNi_e 

 

(2)

where T1 and T2 are different from each other and selected from the group consisting of Fe, Co and Ni, 25 at %≦

a≦

75 at %, 25 at %≦

b≦

75 at %, and a+b=100; and

0<

c≦

75 at %, 0<

d≦

75 at %, 0<

e≦

63 at %, and c+d+e=100.

23. A magnetic head comprising the magnetoresistive device according to any of claims 1 to 22.

24. A magnetic recording-reproducing apparatus, comprising a magnetic recording medium, and the magnetoresistive device according to any of claims 1 to 22.

2. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is formed of an alloy represented by general formula (3) or (4) given below;

(T1_a/100T2_b/100)<sub>100−

x</sub>M1_x 

 

(3)(T1_c/100T2_d/100T3_e/100)<sub>100−

x</sub>M1_x 

 

(4)

where T1, T2 and T3 are different from each other and selected from the group consisting of Fe, Co and Ni;

M1 is at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F;

25 at %≦

a≦

75 at %, 25 at %≦

b≦

75 at %, and a+b=100;

5 at %≦

c≦

90 at %, 5 at %≦

d≦

90 at %,

5 at %≦

e≦

90 at %, and c+d+e=100; and

0.1 at %≦

x≦

30 at %.

3. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (5) given below;

Fe<sub>100−

a</sub>T1_a 

 

(5)

where T1 is at least one element selected from the group consisting of Co, Cr, V, Ni, Rh, Ti, Mo, W, Nb, Ta, Pd, Pt, Zr and Hf; and

0 at %≦

a<

70 atomic %;

and wherein the alloy has a body-centered cubic crystal structure.

4. A magnetoresistive device, comprising a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (6) given below;

Fe<sub>100−

a</sub>T1_a 

 

(6)

where

0 at %≦

a≦

80 at %, in the case where T1 is Co;

0 at %≦

a≦

80 at %, in the case where T1 is Cr;

0 at %≦

a≦

70 at %, in the case where T1 is V;

0 at %≦

a≦

20 at %, in the case where T1 is Ni;

0 at %≦

a≦

55 at %, in the case where T1 is Rh; and

0 at %≦

a≦

51 at %, in the case where T1 is Ti;

and wherein the alloy has a body-centered cubic crystal structure.

5. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is formed of a ternary alloy selected from the group consisting of an Fe—

Co—

Ni alloy, a Co—

Mn—

Fe alloy and an Fe—

Cr—

Co alloy;

and wherein the ternary alloy has a body-centered cubic crystal structure.

6. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by any of general formulas (7) to (10) given below;

(Fe<sub>100−

a)/100</sub>T1_a/100)<sub>100−

x</sub>M_x 

 

(7)(Fe—

Co—

Ni)<sub>100−

x</sub>M_x 

 

(8)(Co—

Mn—

Fe)<sub>100−

x</sub>M_x 

 

(9)(Fe—

Cr—

Co)<sub>100−

x</sub>M_x 

 

(10)

where T1 is at least one element selected from the group consisting of Co, Cr, V, Ni, Rh, Ti, Mo, W, Nb, Ta, Pd, Pt, Zr and Hf, and 0 at %≦

a≦

70 atomic %;

the Fe—

Co—

Ni alloy is in a composition region forming a body-centered cubic crystal;

the Co—

Mn—

Fe alloy is in a composition region forming a body-centered cubic crystal structure;

the Fe—

Cr—

Co alloy is in a composition region forming a body-centered cubic crystal structure;

0.1 at %≦

x≦

20 at %, in the case where M is at least one element selected from the group consisting of Mn, Cu, Re, Ru, Pd, Pt, Ag, Au and Al; and

0.1 at %≦

x≦

10 at %, in the case where M is at least one element selected from the group consisting of Sc, Zn, Ga, Ge, Zr, Hf, Y, Tc, B, In, C, Si, Sn, Ca, Sr, Ba, O, F and N;

and wherein the alloy has a body-centered cubic crystal structure.

7. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (11) given below;

(Fe<sub>(100−

a)/100</sub>T1_a/100)<sub>100−

x</sub>M_x 

 

(11)

 

where

0 at %≦

a≦

80 at %, in the case where T1 is Co;

0 at %≦

a≦

80 at %, in the case where T1 is Cr;

0 at %≦

a≦

70 at %, in the case where Ti is V;

0 at %≦

a≦

10 %, in the case where T1 is Ni;

0 at %≦

a≦

55 at %, in the case where T1 is Rh;

0 at %≦

a≦

51 at %, in the case where T1 is Ti;

0.1 at %≦

x≦

20 at %, in the case where M is at least one element selected from the group consisting of Mn, Cu, Re, Ru, Pd, Pt, Ag, Au and Al; and

0.1 at %≦

x≦

10 at %, in the case where M is at least one element selected from the group consisting of Sc, Zn, Ga, Ge, Zr, Hf, Y, Tc, B, In, C, Si, Sn, Ca, Sr, Ba, O, F and N;

and wherein the alloy has a body-centered cubic crystal structure.

8. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (12) given below;

(Fe<sub>(100−

a)/100</sub>T1_a/100)<sub>100−

x</sub>M_x 

 

(12)

where T1 is at least one element selected from the group consisting of Co and Ni, and 0 at %≦

a≦

50 at %; and

M is at least one element selected from the group consisting of Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, 0, N and F, and 0.1 at %≦

x≦

30 at %.

9. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (13) given below;

(Fe<sub>(100−

a)/100</sub>T1_a/100)<sub>100−

x</sub>M_x 

 

(13)

where T1 is at least one element selected from the group consisting of Co and Ni, and 0 at %≦

a≦

50 at %; and

M is at least one element selected from the group consisting of Cu, Zn and Ga, and 0.1 at %≦

x≦

30 at %.

10. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (14) given below;

Fe<sub>100−

x</sub>M_x 

 

(14)

where M is at least one element selected from the group consisting of Co and Ni, and 0.1 at %≦

x≦

5 at %.

11. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (15) given below;

(Co<sub>(100−

a)/100</sub>T1_a/100)<sub>100−

x</sub>M_x 

 

(15)

where T1 is at least one element selected from the group consisting of Fe and Ni, and 0 at %≦

a≦

50 at %; and

M is at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and 0.1 at %≦

x≦

30 at %.

12. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (16) given below;

(Co<sub>(100−

a)/100</sub>T1_a/100)<sub>100−

x</sub>M_x 

 

(16)

where T1 is at least one element selected from the group consisting of Fe and Ni, and 0 at %≦

a≦

50 at %; and

M is at least one element selected from the group consisting of Sc, Ti, Mn, Cu and Hf, and 0.1 at %≦

x≦

30 at %.

13. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (17) given below;

Co<sub>100−

x</sub>M_x 

 

(17)

where M is at least one element selected from the group consisting of Fe and Ni, and 0.1 at %≦

x≦

5 at %.

14. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (18) given below;

(Ni<sub>(100−

a)/100</sub>T1_a/100)<sub>100−

x</sub>M_x 

 

(18)

where T1 is at least one element selected from the group consisting of Co and Fe, and 0 at %≦

a≦

50 at %; and

M is at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and 0.1 at %≦

x≦

30 at %.

15. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (19) given below;

(Ni<sub>(100−

a)/100</sub>T1_a/100)<sub>100−

x</sub>M_x 

 

(19)

where T1 is at least one element selected from the group consisting of Fe and Co, and 0 at %≦

a≦

50 at %; and

M is at least one element selected from the group consisting of Sc, Ti, Mn, Zn, Ga, Ge, Zr and Hf, and 0.1 at %≦

x≦

30 at %.

16. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (20) given below;

Ni<sub>100−

x</sub>M_x 

 

(20)

where M is at least one element selected from the group consisting of Fe and Co, and 0.1 at %≦

x≦

5 at %.

17. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary alloy or a ternary alloy represented by general formula (21-a) or (21-b) given below;

(T1_aT2_b)<sub>100−

x</sub>M_x 

 

(21-a)(Fe_cCo_dNi_e)<sub>100−

x</sub>M_x 

 

(21-b)

where T1 and T2 are different from each other and selected from the group consisting of Fe, Co and Ni, 25 at %≦

a≦

75 at %, 25 at %≦

b≦

75 at %, and a+b=100;

0<

c≦

75 at %, 0<

d≦

75 at %, 0<

e≦

63 at %, and c+d+e=100; and

M is at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and

0.1 at %≦

x≦

20 at %.

18. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer has a laminate structure comprising alternately laminated layers of;

(i) at least one layer substantially formed of an alloy represented by general formula (22-a) or (22-b) given below;

T1_aT2_b 

 

(22-a)Fe_cCo_dNi_e 

 

(22-b)

where T1 and T2 are different from each other and selected from the group consisting of Fe, Co and Ni, 25 at %≦

a≦

75 at %, 25 at %≦

b≦

75 at %, and a+b=100; and

0<

c≦

75 at %, 0<

d≦

75 at %, 0<

e≦

63 at %, and c+d+e=100; and

(ii) at least one layer formed of at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and having a thickness falling within a range of between 0.03 nm and 1 nm.

19. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer is substantially formed of an alloy represented by general formula (23) or (24) given below;

(Ni_aFe_bCo_c) <sub>100−

x</sub>M_x 

 

(23)(Ni_dFe<sub>100−

d</sub>) <sub>100−

x</sub>M_x 

 

(24)

where 0<

a≦

75 at %, 0<

b≦

75 at %, 0<

c≦

75 at %, and a+b=100;

75 at %≦

d≦

85 at %; and

M is at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and

0.1 at %≦

x≦

20 at %.

20. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein at least one of the magnetization pinned layer and the magnetization free layer has a laminate structure comprising alternately laminated layers of;

(i) at least one layer substantially formed of an alloy represented by general formula (25) or (26) given below;

Ni_aFe_bCo_c 

 

(25)Ni_dFe<sub>100−

d</sub> 

 

(26)

where 0<

a≦

75 at %, 0<

b≦

75 at %, 0<

c≦

75 at %, and a+b=100; and

75 at %≦

d≦

85 at %; and

(ii) at least one layer formed of at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu., Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and having a thickness falling within a range of between 0.03 nm and 1 nm.

21. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein the magnetization pinned layer is substantially formed of an alloy represented by general formula (27) or (28) given below;

(Fe_aCo_bNi_C)<sub>100−

x</sub>M_x 

 

(27)(Fe_dCo<sub>100−

d</sub>)<sub>100−

x</sub>M_x 

 

(28)

where 0<

a≦

75 at %, 0<

b≦

75 at %, 0<

c≦

75 at %, and a+b=100;

45 at %≦

d≦

55 at %; and

M is at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and

0.1 at %≦

x≦

20 at %,

and wherein the magnetization free layer is substantially formed of an alloy represented by general formula (29) or (30) given below;

(Ni_eFe_fCo_g)<sub>100−

x</sub>M_x 

 

(29)(Ni_hFe<sub>100−

h</sub>)<sub>100−

x</sub>M_x 

 

(30)

where 60 at %≦

e≦

75 at %, 12.5 at %≦

f≦

20 at %, 12.5 at %≦

g≦

20 at %, and e+f+g=100;

75 at %≦

h≦

85 at %; and

M is at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and

0.1 at %≦

x≦

20 at %.

22. A magnetoresistive device, comprising:

a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;

a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;

a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and

electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer,

wherein the magnetization pinned layer has a laminate structure comprising alternately laminated layers of;

(i) at least one layer substantially formed of an alloy represented by general formula (31) or (32) given below;

Fe_aCo_bNi_C 

 

(31)Fe_dCo<sub>100−

d</sub> 

 

(32)

where 0<

a≦

75 at %, 0<

b≦

75 at %, 0<

c≦

75 at %, and a+b=100;

45 at %≦

d≦

55 at %; and

(ii) at least one layer formed of at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and having a thickness falling within a range of between 0.03 nm and 1 nm,

and wherein the magnetization free layer has a laminate structure comprising alternately laminated layers of;

(i) at least one layer substantially formed of an alloy represented by general formula (33) or (34) given below;

Ni_eFe_fCo_g 

 

(33)(Ni_hFe<sub>100−

h</sub> 

 

(34)

where 60 at %≦

e≦

75 at %, 12.5 at %≦

f≦

20 at %, 12.5 at %≦

g≦

20 at %, and e+f+g=100;

75 at %≦

h≦

85 at %; and

(ii) at least one layer formed of at least one element selected from the group consisting of Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, Au, B, Al, In, C, Si, Sn, Ca, Sr, Ba, O, N and F, and having a thickness falling within a range of between 0.03 nm and 1 nm.