Light source

• US 20020153835A1
• Filed: 11/06/2001
• Published: 10/24/2002
• Est. Priority Date: 02/09/2000
• Status: Active Grant

• Current Assignee: LEIZ Advanced Technology Corporation
• Original Assignee: Nippon Leiz Corporation
• Inventors: Nakano, Akio, Fujiwara, Tsubasa
• Granted Patent: US 6,680,568 B2
• Time in Patent Office: Days
• US Class Current: 313/512
• CPC Class Codes: H01L 2224/32013 the layer connector being larger than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83385 Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/85385 Shape, e.g. interlocking features
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/60 : Reflective elements

Abstract

The object of the invention is to provide light equipment which effectively utilizes the light emanating from a semiconductor luminous element and which can acquire clear and high-luminance light emission without a color dapple. The light equipment is configured as follows. Transparent resin in which wavelength converting material is mixed is provided on the reflecting surface of base material such as a case, a board and a lead frame, a transparent semiconductor luminous element is mounted, bonded and fixed on the transparent resin, the wavelength of light emitted from the back surface of the semiconductor luminous element is converted by the wavelength converting material, the converted light is reflected on the reflecting surface, the reflected light is mixed with light emitted from the surface of the semiconductor luminous element and the mixed light is radiated.

Claims

1. Light equipment, comprising:

transparent resin which is provided on the reflecting surface of base material and in which wavelength converting material is mixed; and

a transparent semiconductor luminous element provided on the transparent resin, wherein;

the wavelength of light emitted from the back surface of the semiconductor luminous element is converted by the wavelength converting material;

the converted light is reflected on the reflecting surface; and

the reflected light and light directly emitted from the front surface of the semiconductor luminous element are mixed and the mixed light is radiated from the surface of the semiconductor luminous element.

2. Light equipment according to claim 1, wherein:

conductive material is further mixed in the transparent resin.

3. Light equipment according to claim 1, wherein:

the transparent resin is formed in larger area than the area of the semiconductor luminous element on the base material; and

the semiconductor luminous element is bonded and fixed on the transparent resin on the base material.

4. Light equipment according to claim 1, wherein:

a concave portion is provided to the base material;

the transparent resin is filled in the concave portion; and

the semiconductor luminous element is bonded and fixed on the transparent resin filled in the concave portion.

5. Light equipment according to claim 4, wherein:

the aperture area of the concave portion is smaller than the area of the back surface of the semiconductor luminous element.

6. Light equipment according to claim 4, wherein:

the inner wall of the concave portion is opposite to the side of the semiconductor luminous element; and

the inner wall is an inclined face that extends from the bottom of the concave portion toward the aperture of the concave portion.

7. Light equipment according to claim 6, wherein:

an angle between the inclined face of the concave portion and the bottom of the concave portion is larger than 0° and

is equal to or smaller than 45°

.

8. Light equipment according to claim 4, wherein:

the aperture of the concave portion is in the shape of light emission of the semiconductor luminous element, in a rectangular shape or in a circular shape.

9. Light equipment according to claim 4, wherein:

the concave portion is processed and formed by etching, laser beam machining or electrical discharge machining.

10. Light equipment according to claim 1, wherein:

the semiconductor luminous element is bonded and fixed on the transparent resin by a transparent adhesive.

11. Light equipment according to claim 10, wherein:

the semiconductor luminous element is provided with a transparent electrode on the back surface; and

the transparent electrode is provided on an active layer formed on a transparent board.

12. Light equipment according to claim 1, wherein:

the base material is made of any of a ceramic board, a liquid crystal polymer resin board, a glass fiber epoxy resin board, a lead frame and a reflective case.

13. Light equipment according to claim 1, wherein:

the semiconductor luminous element is made of any of InGaAlP, InGaAlN, InGaN and GaN.