Method of fabricating group-III nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
First Claim
Patent Images
1. A method of fabricating a group-III nitride semiconductor crystal comprising:
- a first step of depositing particles of a group III metal on a substrate surface;
a second step of nitriding the particles in an atmosphere containing a nitrogen source; and
a third step of using a vapor phase growth method to grow a group-III nitride semiconductor crystal represented by InxGayAlzN, where x+y+z=1, 0≦
x≦
1, 0≦
y≦
1, and 0≦
z≦
1, on the substrate surface on which the particles have been deposited.
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Abstract
A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.
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Citations
88 Claims
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1. A method of fabricating a group-III nitride semiconductor crystal comprising:
- a first step of depositing particles of a group III metal on a substrate surface;
a second step of nitriding the particles in an atmosphere containing a nitrogen source; and
a third step of using a vapor phase growth method to grow a group-III nitride semiconductor crystal represented by InxGayAlzN, where x+y+z=1, 0≦
x≦
1, 0≦
y≦
1, and 0≦
z≦
1, on the substrate surface on which the particles have been deposited. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 35, 36, 37, 38, 39, 40, 41, 42, 43, 85, 87, 88)
- a first step of depositing particles of a group III metal on a substrate surface;
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19. A method of fabricating a group-III nitride semiconductor crystal comprising:
- a first step of, in an atmosphere containing no nitrogen source, using thermal decomposition of metallo-organic material that includes at least one metal element selected from among In, Ga and Al to deposit on a sapphire substrate a metal represented by InuGavAlw, where u+v+w=1, 0≦
u≦
1, 0≦
v≦
1 and 0≦
w≦
1, at a temperature T1 that is not lower than a melting point of said metal;
a second step of nitriding the deposited metal at a temperature T2, where T2≧
T1, in an atmosphere containing a nitrogen source and no metallo-organic material; and
a third step of using a metallo-organic chemical vapor deposition method to epitaxially grow on the sapphire substrate on which the metal has been deposited, at a temperature T3, where T3≧
T2, a group-III nitride semiconductor crystal represented by InxGayAlzN, where x+y+z=1, 0≦
x≦
1, 0≦
y≦
1 and 0≦
z≦
1.
- a first step of, in an atmosphere containing no nitrogen source, using thermal decomposition of metallo-organic material that includes at least one metal element selected from among In, Ga and Al to deposit on a sapphire substrate a metal represented by InuGavAlw, where u+v+w=1, 0≦
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34. A method of fabricating a group-III nitride semiconductor crystal represented by InxGayAlzN, where x+y+z=1, 0≦
- x≦
1, 0≦
y≦
1 and 0≦
z≦
1, comprising;
a first step of supplying group III metal material to a substrate to deposit the group III metal material and/or decomposition products thereof on the substrate;
a second step of heat-treating the substrate in an atmosphere containing a nitrogen source; and
a third step of using the group III metal material and nitrogen source to grow a group-III nitride semiconductor crystal on the substrate by a vapor phase method.
- x≦
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44. A method of fabricating a gallium nitride-based compound semiconductor, comprising:
- a first step of adhering metal nuclei to a substrate;
a second step of annealing the metal nuclei;
a third step of nitriding the annealed metal nuclei to form growth nuclei; and
a fourth step of growing a gallium nitride-based compound on the substrate having the growth nuclei to form and grow a layer of gallium nitride-based compound semiconductor crystal. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 86)
- a first step of adhering metal nuclei to a substrate;
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67. A method of fabricating a gallium nitride-based compound semiconductor comprising:
- a first step of adhering metal nuclei to a substrate in which the first step comprises two steps, which are a first-stage step of flowing a gas containing vapor of at least one member selected from among metallo-organic material containing aluminum, metallo-organic material containing gallium and metallo-organic material containing indium, and a second-stage step of flowing gas containing vapor of a different metallo-organic material from that of the first-stage step;
a second step of nitriding the metal nuclei to form growth nuclei; and
a third step of growing a gallium nitride-based compound on the substrate having the growth nuclei to form and grow a layer of gallium nitride-based compound semiconductor crystal.
- a first step of adhering metal nuclei to a substrate in which the first step comprises two steps, which are a first-stage step of flowing a gas containing vapor of at least one member selected from among metallo-organic material containing aluminum, metallo-organic material containing gallium and metallo-organic material containing indium, and a second-stage step of flowing gas containing vapor of a different metallo-organic material from that of the first-stage step;
Specification