Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device

• US 20020157703A1
• Filed: 01/31/2002
• Published: 10/31/2002
• Est. Priority Date: 02/01/2001
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Nakayama, Akiya, Takai, Yasuyoshi, Echizen, Hiroshi, Kiso, Shigeo, Okada, Naoto
• Granted Patent: US 6,930,025 B2
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: C23C 14/024 Deposition of sublayers, e.g. to promote adhesion of the coating C23C14/027 takes precedence
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/022483 composed of zinc oxide [ZnO]
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies:

2≦(second film formation rate)/(first film formation rate)≦100;

which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structure of photovoltaic devices.

Claims

1. A process for forming on a substrate a transparent conductive film having crystallizability, the process comprising:

a first step of forming a film at a first film formation rate; and

a second step of forming a film at a second film formation rate;

the relationship between film formation rates in the respective steps satisfying;

2≦

(second film formation rate)/(first film formation rate)≦

100.

2. The transparent conductive film formation process according to claim 1, wherein, in the first step, nuclei are formed on the substrate, and, in the second step, a transparent conductive film is so formed as to cover the substrate surface and the surfaces of the nuclei over their whole area.

3. The transparent conductive film formation process according to claim 1, wherein, in the first step, the film is formed in a thickness of from 1 nm to 100 nm.

4. The transparent conductive film formation process according to claim 1, wherein, in the second step, the film is formed in a thickness of 5 μ

m or less.

5. The transparent conductive film formation process according to claim 1, wherein, in the second step, the film is formed in a thickness of 1 μ

m or less.

6. The transparent conductive film formation process according to claim 1, wherein, in the first step, the first step is carried out such that the average distance between the apexes of hills themselves of the transparent conductive film formed in the first step and the average distance between the apexes of hills of the transparent conductive film formed in the first step and the substrate surface are in a ratio of from 1:

3 to 4;

1.

7. The transparent conductive film formation process according to claim 1, wherein the transparent conductive film is formed by a roll-to-roll method in which a continuous substrate is put across rollers and transported therebetween.

8. The transparent conductive film formation process according to claim 1, which further comprises, after the second step, a third step of forming a transparent conductive film at a third film formation rate, and the relationship between film formation rates in the respective steps satisfies:

2<

(second film formation rate)/(first film formation rate)≦

100;

2≦

(third film formation rate)/(first film formation rate)<

100; and

(second film formation rate)>

(third film formation rate).

9. The transparent conductive film formation process according to claim 8, wherein, in the third step, the film is formed in a thickness of 5 μ

m or less;

10. The transparent conductive film formation process according to claim 1, wherein the transparent conductive film is formed by sputtering.

11. The transparent conductive film formation process according to claim 10, wherein, in the second step, a target having been subjected to pre-sputtering is used.

12. A process for producing a photovoltaic device;

the process comprising the steps of;

forming a transparent conductive film by the process according to claim 1;

and

forming a semiconductor layer.

13. A transparent conductive film formed by the process according to claim 1.

14. A photovoltaic device comprising a transparent conductive film formed by the process according to claim 1.