Semiconductor light-emitting device and method for producing same

• US 20020158259A1
• Filed: 02/12/2002
• Published: 10/31/2002
• Est. Priority Date: 02/14/2001
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ito, Shigetoshi, Ono, Tomoki
• Granted Patent: US 6,593,595 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01S 5/0658 Self-pulsating
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A semiconductor light-emitting device of the present invention includes: a substrate; a light-emitting layer provided above the substrate; and a saturable absorbing layer provided above the substrate, the saturable absorbing layer having characteristics in which saturation of light absorption occurs. The semiconductor light-emitting device has self-pulsation characteristics due to the saturable absorbing layer, and the semiconductor light-emitting device is characterized in that the saturable absorbing layer is doped with carbon.

Claims

1. A semiconductor light-emitting device, comprising:

a substrate;

a light-emitting layer provided above the substrate; and

a saturable absorbing layer provided above the substrate, the saturable absorbing layer having characteristics in which saturation of light absorption occurs,

wherein;

the semiconductor light-emitting device has self-pulsation characteristics due to the saturable absorbing layer; and

the semiconductor light-emitting device is characterized in that the saturable absorbing layer is doped with carbon.

2. A semiconductor light-emitting device according to claim 1, wherein the saturable absorbing layer is doped with a p-type dopant.

3. A semiconductor light-emitting device according to claim 1, wherein the saturable absorbing layer includes a quantum well layer.

4. A semiconductor light-emitting device according to claim 1, wherein the saturable absorbing layer has a multiple quantum well structure including a plurality of quantum well layers and a plurality of barrier layers.

5. A method for producing a semiconductor light-emitting device, characterized by comprising the steps of:

forming a first nitride semiconductor layer on a first conductive nitride semiconductor substrate at a first growth temperature;

sequentially forming above the first conductive nitride semiconductor layer a first conductive nitride semiconductor crack prevention layer at a second growth temperature differing from the first growth temperature, a first conductive nitride semiconductor cladding layer at the first growth temperature, and a first conductive nitride semiconductor guide layer at the first growth temperature;

forming a first conductive nitride semiconductor active layer on the first conductive nitride semiconductor guide layer at a third growth temperature differing from the second growth temperature;

sequentially forming above the first conductive nitride semiconductor active layer a second conductive nitride semiconductor barrier layer and a second conductive nitride semiconductor guide layer at the first growth temperature;

forming a saturable absorbing layer made of a nitride semiconductor on the second conductive nitride semiconductor guide layer at a fourth growth temperature differing from the third growth temperature;

sequentially forming above the saturable absorbing layer made of a nitride semiconductor a second conductive nitride semiconductor cladding layer and a second conductive nitride semiconductor contact layer at the first growth temperature; and

forming a ridge structure using a dry-etching treatment.

6. A method for producing a semiconductor light-emitting device according to claim 5, wherein the fourth growth temperature is 700°

C. or less.