Structure and method for fabricating high contrast reflective mirrors
First Claim
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1. A high contrast reflective mirror comprising:
- a plurality of alternating first monocrystalline layers and second monocrystalline layers, wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction;
wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and wherein said first index of refraction and said second index of refraction differ by at least about 0.5.
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Abstract
A high contrast reflective mirror includes a plurality of alternating first monocrystalline layers and second monocrystalline layers. The first monocrystalline layers are formed of an oxide material that has a cubic structure and a first index of refraction. The second monocrystalline layers are formed of a semiconductor material that has a second index of refraction. The first index of refraction and the second index of refraction differ by at least about 0.5
14 Citations
48 Claims
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1. A high contrast reflective mirror comprising:
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a plurality of alternating first monocrystalline layers and second monocrystalline layers, wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction;
wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and wherein said first index of refraction and said second index of refraction differ by at least about 0.5. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A vertical-cavity surface-emitting laser comprising:
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a monocrystalline substrate;
a first DBR mirror epitaxially grown overlying said substrate, wherein said first DBR mirror comprises;
a plurality of alternating first monocrystalline layers and second monocrystalline layers, wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction;
wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and wherein said first index of refraction and said second index of refraction differ by at least about 0.5;
an active layer epitaxially grown overlying said first DBR mirror; and
a second DBR mirror epitaxially grown overlying said active layer, wherein said second DBR mirror comprises;
a plurality of alternating third monocrystalline layers and fourth monocrystalline layers, wherein said third monocrystalline layers comprise an oxide material having a cubic structure and a third index of refraction;
wherein said fourth monocrystalline layers comprise a semiconductor material having a fourth index of refraction, and wherein said third index of refraction and said fourth index of refraction differ by at least about 0.5. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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25. A vertical-cavity surface-emitting laser circuit comprising:
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a monocrystalline substrate;
a portion of an MOS circuit formed in said substrate;
a portion of a vertical-cavity surface-emitting laser overlying said substrate, wherein said portion of said vertical-cavity surface-emitting laser comprises;
a first DBR mirror epitaxially grown overlying said substrate, wherein said first DBR mirror comprises;
a plurality of alternating first monocrystalline layers and second monocrystalline layers, wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction;
wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and wherein said first index of refraction and said second index of refraction differ by at least about 0.5;
an active layer epitaxially grown overlying said first DBR mirror;
a second DBR mirror epitaxially grown overlying said active layer, wherein said second DBR mirror comprises;
a plurality of alternating third monocrystalline layers and fourth monocrystalline layers;
wherein said third monocrystalline layers comprise an oxide material having a cubic structure and a third index of refraction;
wherein said fourth monocrystalline layers comprise a semiconductor material having a fourth index of refraction, and wherein said third index of refraction and said fourth index of refraction differ by at least about 0.5; and
an electrical connection electrically coupling said portion of an MOS circuit and said portion of a vertical-cavity surface-emitting laser.
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42. A process for fabricating a high contrast reflective mirror comprising:
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providing a monocrystalline substrate;
epitaxially growing alternating first monocrystalline layers and second monocrystalline layers, wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction, wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and wherein said first index of refraction and said second index of refraction differ by at least 0.5. - View Dependent Claims (43, 44, 45, 46, 47, 48)
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Specification