Nanofabrication

• US 20020158342A1
• Filed: 03/14/2002
• Published: 10/31/2002
• Est. Priority Date: 03/14/2001
• Status: Active Grant

• Current Assignee: University Of Massachusetts
• Original Assignee: University Of Massachusetts
• Inventors: Russell, Thomas P., Tuominen, Mark, Ursache, Andrei, Bal, Mustafa
• Granted Patent: US 7,189,435 B2
• Time in Patent Office: Days
• US Class Current: 257/784
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G03F 7/164 using electric, electrostatic or magnetic means; powder coating
• CPC Class Codes: H01J 1/3048 Distributed particle emitters
• CPC Class Codes: H01J 1/53 Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted, or stored
• CPC Class Codes: H01J 2201/30469 Carbon nanotubes (CNTs)
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 10/701 Organic molecular electronic devices
• CPC Class Codes: H10N 10/10 operating with only the Peltier or Seebeck effects
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device
• CPC Class Codes: H10N 50/01 Manufacture or treatment

Abstract

Pathways to rapid and reliable fabrication of three-dimensional nanostructures are provided. Simple methods are described for the production of well-ordered, multilevel nanostructures. This is accomplished by patterning block copolymer templates with selective exposure to a radiation source. The resulting multi-scale lithographic template can be treated with post-fabrication steps to produce multilevel, three-dimensional, integrated nanoscale media, devices, and systems.

Claims

1. A multilayer nanostructure comprising:

a substrate surface, at least a portion of which is conductive or semiconductive; and

at least one set of nanowires extending from the conductive or semiconductive substrate surface, wherein one end of the nanowires is in electrical communication with the conductive or semiconductive surface.

2. The multilayer nanostructure of claim 1, further comprising at least one conductive or semiconductive layer contacting an opposite end of at least some of the nanowires in the set, wherein the conductive or semiconductive layer is in electrical communication with at least some of the nanowires in the set.

3. The multilayer nanostructure of claim 1, wherein the set comprises nanowires having substantially the same length.

4. The multilayer nanostructure of claim 3, wherein the set comprises nanowires having length of at least 20 nm.

5. The multilayer nanostructure of claim 4, wherein the set comprises nanowires having length of at least 100 nm.

6. The multilayer nanostructure of claim 1, wherein the substrate is lithographically patterned, having a plurality of independently conductive or semiconductive surface regions.

7. The multilayer nanostructure of claim 6, wherein at least one set is in electrical communication with a plurality of independently conductive or semiconductive surface regions.

8. The multilayer nanostructure of claim 6, wherein at least some independently conductive or semiconductive surface regions are each in electrical communication with an individual set of nanowires.

9. The multilayer nanostructure of claim 2, wherein the substrate is lithographically patterned, having a plurality of independently conductive or semiconductive surface regions.

10. The multilayer nanostructure of claim 9, wherein at least one set is in electrical communication with a plurality of independently conductive or semiconductive surface regions.

11. The multilayer nanostructure of claim 9, wherein at least some independently conductive or semiconductive surface regions are each in electrical communication with individual sets of nanowires.

12. The multilayer nanostructure of claim 11, wherein the conductive or semiconductive layer is in electrical communication with at least some of the nanowires in a plurality of sets.

13. The multilayer nanostructure of claim 2, comprising a plurality of the conductive or semiconductive layers.

14. The multilayer nanostructure of claim 13, wherein at least some conductive or semiconductive layers are each in electrical communication with at least some nanowires in a plurality of sets.

15. The multilayer nanostructure of claim 11, wherein at least some sets comprise nanowires made of material distinct from that of other sets.

16. The multilayer nanostructure of claim 15, wherein nanowires differ in their reduction potential.

17. The multilayer nanostructure of claim 15, wherein nanowires differ in their semi-metal type.

18. The multilayer nanostructure of claim 1, wherein at least some nanowires comprise magnetic material.

19. The multilayer nanostructure of claim 1, wherein at least some nanowires are multilayered.

20. The multilayer nanostructure of claim 19, wherein at least some nanowires are multilayered.

21. The multilayer nanostructure of claim 11, wherein at least some sets can be modified to have magnetic properties distinct from those of other sets.

22. The multilayer nanostructure of claim 21, wherein the magnetic properties comprise magnetization direction.

23. A field emission display device comprising:

an addressable array of field emitters comprising a multilayer nanostructure of claim 12; and

a phosphorescent screen.

24. A thermoelectric cooling device comprising:

a multilayer nanostructure of claim 17, comprising nanowires of “

n-” and

“

p-”

types.

25. A magnetic data storage device comprising:

a multilayer nanostructure of claim 21, wherein the nanowires have an aspect ratio of at least 20;

1.

26. A magneto-electronic device comprising:

a multilayer nanostructure of claim 12, wherein the nanowires comprise magnetic material.

27. The magneto-electronic device of claim 26, wherein the nanowires comprise asymmetric magnetic heterostructure.

29. The method of claim 28, further comprising depositing a resist layer on at least a portion of the metal layer prior to orienting the copolymer.

30. The method of claim 28, wherein the removal of at least a portion of one component from the oriented copolymer is performed by exposure to radiation.

31. The method of claim 28, wherein the material used to at least partially fill at least some of the nanopores comprises magnetic material.

28. A method of interfacing an electrical connection with a multilayer nanostructure, the method comprising:

preparing a diblock copolymer on a substrate surface, at least a portion of which is conductive or semiconductive;

depositing a metal layer on at least a portion of the diblock copolymer layer;

orienting the diblock copolymer to form nanoscopic cylinders parallel to each other and vertically oriented with respect to the surface;

removing at least a portion of one component from the oriented copolymer to form a patterned array of nanopores in the copolymer; and

at least partially filling at least some of the nanopores with a material.

32. A magnetotransfer device comprising:

a substrate surface comprising at least one electrode;

an array of magnetic nanowires extending vertically from the surface in electrical communication with at least one electrode, wherein the array of nanowires is periodic on the tens of nanometers scale.

33. The device of claim 32, wherein the interwire spacing in the array is substantially regular.

34. The device of claim 33, wherein the interwire spacing is less than the spin diffusion length.