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Semiconductor device

  • US 20020158666A1
  • Filed: 04/17/2002
  • Published: 10/31/2002
  • Est. Priority Date: 04/27/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor having a first impurity region connected to a first power source;

    a second transistor having a first impurity region connected to a second power source;

    a third transistor having a first impurity region connected to the first power source; and

    a fourth transistor having a first impurity region connected to the second power source, wherein;

    the first to fourth transistors have a same conductivity type;

    a second impurity region of the first transistor and a second impurity region of the second transistor are connected to one terminal of a capacitance;

    a second impurity region of the third transistor, a second impurity region of the fourth transistor, and a gate electrode of the first transistor are connected to the other terminal of the capacitance;

    a gate electrode of the second transistor and a gate electrode of the fourth transistor are connected to an input signal line; and

    a gate electrode of the third transistor is connected to the first power source.

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