Method for fabrication of field emission devices using carbon nanotube film as a cathode

• US 20020160111A1
• Filed: 04/22/2002
• Published: 10/31/2002
• Est. Priority Date: 04/25/2001
• Status: Abandoned Application

• Current Assignee: Yi Sun, Zhuo Sun
• Original Assignee: Yi Sun, Zhuo Sun
• Inventors: Sun, Zhuo, Sun, Yi
• Application Number:
  US10/127,296
• Publication Number:
  US 20020160111A1
• Time in Patent Office: Days
• US Class Current: 427/248.1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: H01J 2201/30469 Carbon nanotubes (CNTs)
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

The present invention relates to field emission deices fabrication using carbon nanotube film as a cathode. The multi-wall carbon nanotubes film possesses low electron field emission and high emission current density, which is deposited by catalytic chemical vapor deposition at low temperature. The carbon nanotubes density can be controlled by tuning of the transition metal catalysts in the seed alloy layer. The film can be deposited onto the substrate uniformly with large area. The present invention is related to the fabrication of cold electron sources, florescent light, vacuum electronic devices, field emission displays and methods of making same.

Claims

1. A method for fabrication of carbon nanotubes film, comprising the steps of:

(a) Synthesizing catalyst layer consisted of at least one of the transition metals and related alloy, compound, or composite;

(b) Synthesizing carbon nanotubes film on said catalyst layer using hydrocarbon precursor by chemical vapor deposition in the pressure of 10<sup>−

4</sup> torr to 1 atm. and temperature of 300-800°

C.

2. A method for fabrication of field emission cathodes, comprising the steps of:

(a) Synthesizing conductive layer on substrate;

(b) Using photolithography or screen-printing process to form patterns using dielectric materials as insulator.

(c) Selectively growth of carbon nanotubes film arrays by using method of claim 1.

4. The method of claim 1, wherein said catalyst layer consists of at least one of the transition metals comprising Ni, Pd, Pt, Fe, Ru, Os, Co, Rh, Ir, Cu, Ag, Au, Zn, Cd, Mn, Tc, Re, Cr, Mo, W, V, Nb, Ta, Ti, Zr Hf, Sc, Y, La. Wherein said related alloy, compound, or composite which contains at least one of the transition metals, comprising Ni/Fe, Ni/Co, Ni/Cr, Ni/Ti, Ni/Mo, Ni/Al, Ni/W, Ni/Si, Ni/Ge, Ni/C, Fe/Co, Fe/Cr, Fe/Ti, Fe/Mo, Fe/Al, Fe/W, Fe/Si, Fe/Ge, Fe/C, Co/Cr, Co/Ti, Co/Mo, Co/Al, Co/W, Co/Si, Co/C, Cu/Cr, Cu/Ti, Cu/Mo, Cu/Al, Cu/W, Cu/Si, Cu/Ge, Cu/C. The thickness of the catalyst layer is below 100 μ

m.

5. The method of claim 1, wherein said catalyst layer is prepared by at least one method selected from the group of screen-printing, sputtering, evaporation, vacuum arc, pulsed-laser ablation, electroplating, sol-gel, electrochemical, chemical, and chemical vapor depositions.

6. The method of claim 1, wherein said carbon nanotubes have a diameter in the range of 1-500 μ

m, length of 1 nm-10 μ

m. The carbon nanotubes have a shape includes cylindrical, spherical, toroid, helical.

7. The method of claim 1, wherein said hydrocarbon precursor comprises at least one precursor selected from the group of acetylene, ethylene, propylene, butene, methane, ethane, propane, butane, pentane, pentanes, hexane, cyclohexane, benzene, and toluene. The hydrocarbon precursor is diluted comprises at least one gas selected from the group of hydrogen, nitrogen, argon, helium, neon.

8. The method of claim 1, wherein said chemical vapor deposition comprises thermal chemical vapor deposition, plasma enhanced (microwave or radio frequency) chemical vapor deposition, hot-filament chemical vapor deposition.

9. The method of claim 2, wherein said conductive layer comprises at least one material selected from the group consisting of Cr, Al, Au, Ag, Cr, Ti, Cu, Ni, Fe, Co, Pt, Mo, W, ZnO, InO, ITO (indium-tin oxide).

10. The method of claim 2, wherein said dielectric materials comprise silicon oxide, silicon nitride, magnesium oxide, tantalum oxide, titanium oxide and tungsten oxide films.

11. The methods of claim 2, wherein said substrate comprises at least one material selected from the group consisting of glass, semiconductor, metal, alloy, ceramic, composite materials.

12. The method of claim 3, wherein said anode comprises at least a conductive substrate or a conductive layer said in claim 9 on substrate said of claim 11. For display devices, the anode comprises phosphor, transparent conductive layer and glass substrate.

13. A method of controlling shape, diameter and length and density of the carbon nanotubes in the film by selecting the transition metal said in claim 4 and concentration of the transition metal in the alloys, compounds, or composites.

14. A flat panel display devices comprising the field emission device of claim 1.

15. Vacuum electronic devices comprising microwave amplifier, vacuum-electronic sensor, vacuum pressure gauge, spectrometer, electron microscopy, electron beam source, by using the field emission device of claim 1.

16. A cold cathode light source comprising using the field emission device of claim 1.

3. A field emission devices comprising:

(a) A cathode consisted of a substrate, conductive layer and electron emission layer, vacuum gap and an anode;

(b) A conductive layer on the surface of said substrate;

(c) An electron emission layer consisted of carbon nanotubes on said conductive layer;