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Semiconductor Device

  • US 20020163036A1
  • Filed: 09/18/2001
  • Published: 11/07/2002
  • Est. Priority Date: 05/01/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode formed on a surface of a semiconductor substrate with a gate insulating film therebetween;

    sidewall insulating films formed on opposite side surfaces of said gate electrode, respectively; and

    source/drain regions formed on one and the other of regions of said semiconductor substrate spaced from each other with said gate electrode and said sidewall insulating films therebetween, and each including a portion formed at the surface of said semiconductor substrate and a raised portion formed on the surface of said portion formed at the semiconductor substrate surface, wherein said sidewall insulating film is provided at its portion located between said raised portion and said gate electrode with a void.

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