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Mode control using transversal bandgap structure in VCSELs

  • US 20020163947A1
  • Filed: 03/08/2002
  • Published: 11/07/2002
  • Est. Priority Date: 03/09/2001
  • Status: Active Grant
First Claim
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1. A vertical cavity surface emitting laser comprising a semiconductor material layer having a gain region adapted to generate light and to emit the generated light, first and second at least substantially parallel mirrors forming a laser cavity comprising the gain region and at least one spacer layer being positioned between the gain region and the first and/or the second mirror, at least one of the mirrors being partially transparent to the generated light so as to allow the light generated in the gain region to be emitted through said at least one mirror, the laser cavity and the gain region supporting at least one transverse electromagnetic mode for the generated light, and a photonic band gap region formed within or adjacent to the first and/or the second mirror, or within one of the at least one spacer layer(s), the photonic band gap region being positioned at least substantially parallel to the first and second mirror, the photonic band gap region having a predetermined periodicity which substantially prevents the generated light from propagating in said region, the photonic band gap region further defining a light aperture without the predetermined periodicity, so as to allow the generated light to propagate through said light aperture, the dimensions of the photonic band gap region and the light aperture being adapted to at least partly control an efficiency of laser action in each transverse electromagnetic mode, the dimension of the photonic band gap region in a direction being substantially normal to the first and second mirror being significantly smaller than the overall dimension of the vertical cavity surface emitting laser in said direction.

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