Process and apparatus for removing residues from the microstructure of an object
First Claim
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1. A process for removing residues from the microstructure of an object comprising steps of:
- preparing a remover including CO2, an additive for removing the residues and a co-solvent for dissolving said additive in said CO2 at a pressurized fluid condition; and
bringing the object into contact with said remover so as to remove the residues from the object.
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Abstract
A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including CO2, an additive for removing the residues and a co-solvent dissolving the additive in said CO2 at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. An apparatus for implementing the process is also provided.
54 Citations
20 Claims
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1. A process for removing residues from the microstructure of an object comprising steps of:
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preparing a remover including CO2, an additive for removing the residues and a co-solvent for dissolving said additive in said CO2 at a pressurized fluid condition; and
bringing the object into contact with said remover so as to remove the residues from the object. - View Dependent Claims (2, 3, 4, 5, 7, 8, 13)
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6. A process for removing residues from the microstructure of an object comprising a step of:
contacting the object with a remover including a supercritical CO2, a compound having a hydroxyl group, and a fluoride of formula NR1R2R3R4F, where R represents a hydrogen or alkyl group. - View Dependent Claims (9, 10)
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11. A process for removing residues from the microstructure of an object comprising steps of:
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placing the object in a vessel;
feeding into the vessel CO2, a compound having a hydroxyl group, and a fluoride of formula NR1R2R3R4F, where R represents a hydrogen or alkyl group; and
maintaining said CO2 including said fluoride and said compound at a supercritical condition to contact the object with said CO2, wherein a concentration of at least one of said fluoride and said compound in said CO2 is so adjusted as to control an etch rate of etching the object so as to remove the residues. - View Dependent Claims (14, 15, 16, 18, 19, 20)
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12. A process for removing residues from a semiconductor wafer comprising steps of:
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ashing a resist on a surface of the semiconductor wafer; and
contacting the semiconductor wafer with supercritical CO2 including a compound having a hydroxyl group and a fluoride of formula NR1R2R3R4F, where R represents a hydrogen or alkyl group, so as to remove ashed resist from the semiconductor wafer.
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17. An apparatus for removing residues from the microstructure of an object, comprising:
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a vessel for placing the object inside, wherein the vessel is provided with at least one inlet for feeding CO2 into said vessel, an additive for removing the residues, and a co-solvent for dissolving the additive in the CO2;
a pump for pressurizing the CO2 to be fed into said vessel; and
a heater for heating the pressurized CO2 in said vessel so as to maintain the pressurized CO2 at a predetermined temperature.
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Specification