Electrostatically actuated micro-electro-mechanical devices and method of manufacture

• US 20020167072A1
• Filed: 03/15/2002
• Published: 11/14/2002
• Est. Priority Date: 03/16/2001
• Status: Abandoned Application

• Current Assignee: Coming Intellisense Corporation
• Original Assignee: Coming Intellisense Corporation
• Inventors: Andosca, Robert George
• Application Number:
  US10/099,153
• Publication Number:
  US 20020167072A1
• Time in Patent Office: Days
• US Class Current: 257/620
• CPC Class Codes: B81B 3/0062 Devices moving in two or more dimensions, i.e. having special features which allow movement in more than one dimension
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

In accordance with one embodiment, a method is provided for fabricating electrodes for an electrostatically actuated MEMS device. The method includes patterning a surface of a wafer to define trenches to be etched, with each trench having an area selected in accordance with a desired depth; etching the surface of the wafer to form the trenches with the etch rate being varied in accordance with the trench area such that the trenches have depths determined by their respective areas; depositing an electrically conductive material in the trenches to form the electrodes; and removing portions of the wafer surrounding the electrodes. In accordance with another embodiment, a method of fabricating an electrostatically actuated MEMS mirror device is provided. The method includes providing a structure having a wafer including a trenches filled with material forming electrodes, and a mirror structure supported on the wafer above the trenches, the mirror structure including a mirror and a suspension mechanism for supporting the mirror with respect to the wafer, the mirror structure being covered by a protective layer; selectively etching the structure to expose the electrodes and to release the mirror structure such that the mirror is suspended by the suspension mechanism above the electrodes; and removing the protective layer from the mirror structure. In accordance with another embodiment, an electrostatically actuated MEMS mirror device formed from a double-bonded wafer stack is provided. The device includes a middle wafer having raised and inclined steering electrodes; a top wafer including a mirror structure having a mirror and a suspension mechanism for rotatably supporting the mirror above and with respect to the steering electrodes; and a handle wafer positioned below the middle wafer for providing front-side or back-side contacts for the electrodes.

Claims

1. A method of fabricating electrodes for an electrostatically actuated MEMS device, comprising:

patterning a surface of a wafer to define a plurality of trenches to be etched, each trench having an area selected in accordance with a desired depth of said trench;

etching said surface of said wafer to form said trenches with said etch rate being varied in accordance with the trench area such that said trenches have depths determined by respective areas thereof;

depositing an electrically conductive material in said trenches to form said electrodes; and

removing portions of the wafer surrounding said electrodes.

2. The method of claim 1 wherein said surface is patterned using a photolithography mask.

3. The method of claim 1 wherein said etching comprises a highly directional etch process.

4. The method of claim 1 wherein said pattern defines a plurality of trenches that generally decrease in area in a radial direction from a generally central location in a pattern formed by said trenches.

5. The method of claim 1 wherein said wafer comprises a silicon wafer.

6. The method of claim 1 wherein said conductive material comprises polysilicon.

7. A method of fabricating an electrode structure for an electrostatically actuated MEMS mirror device, said electrode structure having a plurality of steering electrodes of various heights, comprising:

using a mask to form a pattern on a surface of a wafer, said pattern defining a plurality of trenches, each having an area selected in accordance with a desired depth of said trench;

performing directional etching on said surface of said wafer in a single etching step to form said trenches, wherein said etch rate varies in accordance with the areas of said trenches, and said trenches accordingly have depths determined by respective areas thereof;

depositing an electrically conductive material in said trenches to form said electrodes; and

removing portions of the wafer surrounding said electrodes.

8. The method of claim 7 wherein said pattern defines a plurality of trenches that generally decrease in area in a radial direction from a generally central location in said pattern.

9. The method of claim 7 wherein said wafer comprises a silicon wafer.

10. The method of claim 7 wherein said conductive material comprises polysilicon.

11. A method of fabricating a plurality of trenches of different depths in a wafer, comprising:

using a mask to form a pattern on a surface of the wafer, said pattern defining a plurality of trenches, each having an area selected in accordance with a desired depth of said trench; and

performing directional etching on said surface of said wafer in a single etching step to form said trenches with the etch rate varying in accordance with the areas of said trenches such that said trenches have depths determined by respective areas thereof.

12. The method of claim 11 wherein said pattern defines a plurality of trenches that generally decrease in area in a radial direction from a generally central location in said pattern.

13. The method of claim 11 wherein said wafer comprises a silicon wafer.

15. The method of claim 14 further comprising aligning and affixing said wafer to a handle wafer, said handle wafer providing front-side or back-side contacts for said electrodes.

16. The method of claim 15 wherein said handle wafer comprises a through-wafer interconnect device.

17. The method of claim 14 further comprising forming said mirror structure by affixing a top wafer to said wafer and etching said top wafer to define said mirror and suspension mechanism.

18. The method of claim 17 further comprising depositing a reflective surface on said top wafer.

19. The mirror of claim 18 wherein said reflective surface comprises a titanium/gold material.

20. The method of claim 17 wherein said top wafer comprises silicon.

21. The method of claim 14 wherein said wafer comprises silicon.

22. The method of claim 14 wherein said material forming said electrodes comprises polysilicon.

23. The method of claim 14 wherein said protective layer comprises an oxide layer.

24. The method of claim 14 wherein said etching is performed using xenon difluoride.

25. The method of claim 14 wherein said trenches are formed using a mask to form a pattern on a surface of the wafer, said pattern defining a plurality of trenches, each having a width selected in accordance with a desired depth of said trench;

and performing directional etching on said surface of said wafer in a single etching step to form said trenches with the etch rate varying in accordance with the widths of said trenches such that said trenches have depths determined by respective widths thereof.

26. The method of claim 25 wherein said pattern defines a plurality of trenches that generally decrease in width in a radial direction from a generally central location in said pattern.

28. The device of claim 27 wherein said suspension mechanism comprises a gimbal mechanism.

29. The device of claim 27 wherein said electrodes comprise polysilicon.

30. The device of claim 27 wherein said mirror comprises a mirror base with a reflective surface.

31. The device of claim 27 wherein said reflective surface comprises a gold/titanium material.

32. The device of claim 27 wherein said handle wafer comprises a through-wafer interconnect device.

14. A method of fabricating an electrostatically actuated MEMS mirror device, comprising:

providing a structure comprising an wafer including a plurality of trenches filled with material forming electrodes, and a mirror structure supported on said wafer above said trenches, said mirror structure comprising a mirror and a suspension mechanism for supporting said mirror with respect to said wafer, said mirror structure being covered by a protective layer;

selectively etching said structure to expose said electrodes and release said mirror structure such that said mirror is suspended by said suspension mechanism above said electrodes; and

removing said protective layer from said mirror structure.

27. An electrostatically actuated MEMS mirror device formed from a double-bonded wafer stack, comprising:

a middle wafer having a plurality of raised and inclined steering electrodes;

a top wafer including a mirror structure comprising a mirror and a suspension mechanism for rotatably supporting said mirror above and with respect to said steering electrodes; and

a handle wafer positioned below said middle wafer for providing frontside or back-side contacts for said electrodes.