Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
First Claim
1. A non-volatile semiconductor memory device comprising:
- a semiconductor body of a first conductivity type;
first and second semiconductor regions of a second conductivity type, formed apart from each other on the semiconductor body;
a stacked gate formed on the semiconductor body between the first and second semiconductor regions, with a gate insulating film inserted therebetween, the stacked gate having a first side surface, a second side surface opposed to the first side surface, and an upper surface;
an interlayer insulating film formed above the semiconductor body;
a contact material buried to be adjacent to the first side surface of the stacked gate, in the interlayer insulating film, the contact material contacting the first semiconductor region;
a first insulating film formed on the second side surface and the upper surface, except the first side surface of the stacked gate adjacent to the contact material; and
a second insulating film formed on the first side surface adjacent to the contact material, and the first insulating film.
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Accused Products
Abstract
First and second semiconductor regions are formed apart from each other on a semiconductor body. A stacked gate is formed on the semiconductor body between the first and second semiconductor regions. The stacked gate has a first side surface, a second side surface opposed to the first side surface, and an upper surface. A contact material is buried in an interlayer insulating film above the semiconductor body, to be adjacent to the first side surface of the stacked gate. The contact material contacts the first semiconductor region. A first insulating film is formed on the second side surface and the upper surface, except the first side surface of the stacked gate adjacent to the contact material. A second insulating film is formed on the first side surface of the stacked gate adjacent to the contact material, and the first insulating film.
18 Citations
18 Claims
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1. A non-volatile semiconductor memory device comprising:
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a semiconductor body of a first conductivity type;
first and second semiconductor regions of a second conductivity type, formed apart from each other on the semiconductor body;
a stacked gate formed on the semiconductor body between the first and second semiconductor regions, with a gate insulating film inserted therebetween, the stacked gate having a first side surface, a second side surface opposed to the first side surface, and an upper surface;
an interlayer insulating film formed above the semiconductor body;
a contact material buried to be adjacent to the first side surface of the stacked gate, in the interlayer insulating film, the contact material contacting the first semiconductor region;
a first insulating film formed on the second side surface and the upper surface, except the first side surface of the stacked gate adjacent to the contact material; and
a second insulating film formed on the first side surface adjacent to the contact material, and the first insulating film. - View Dependent Claims (2, 3, 4, 5)
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6. A non-volatile semiconductor memory device comprising:
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a semiconductor body of a first conductivity type;
first and second semiconductor regions of a second conductivity type, formed apart from each other on the semiconductor body;
a stacked gate formed on the semiconductor body between the first and second semiconductor regions, with a gate insulating film inserted therebetween, the stacked gate including a charge storage layer on the gate insulating film, a control gate on the charge storage layer, and a cap insulating film on the control gate, and the stacked gate having a first side surface, a second side surface opposed to the first side surface, and an upper surface, the first and second surfaces each including side surfaces of the charge storage layer, the control gate, and the cap insulating film;
an interlayer insulating film formed above the semiconductor body;
a contact material buried to be adjacent to the first side surface of the stacked gate, in the interlayer insulating film, the contact material contacting the first semiconductor region;
a first insulating film formed on at least a part of the side surface of the control gate on the first side surface, all of the side surface of the charge storage layer; and
a second insulating film formed on the first side surface adjacent to the contact material to cover the first insulating film. - View Dependent Claims (7, 8, 9)
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10. A non-volatile semiconductor memory device comprising:
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a semiconductor body of a first conductivity type;
first and second semiconductor regions of a second conductivity type, formed apart from each other on the semiconductor body;
a stacked gate formed on the semiconductor body between the first and second semiconductor regions, with a gate insulating film inserted therebetween, the stacked gate including a charge storage layer on the gate insulating film, a control gate on the charge storage layer, and a cap insulating film on the control gate, and the stacked gate having a first side surface, a second side surface opposed to the first side surface, and an upper surface, the first and second surfaces each including side surfaces of the charge storage layer, the control gate, and the cap insulating film;
an interlayer insulating film formed above the semiconductor body;
a contact material buried to be adjacent to the first side surface of the stacked gate, in the interlayer insulating film, the contact material contacting the first semiconductor region;
a first insulating film formed on at least a part of the side surface of the control gate on the first side surface, all of the side surface of the charge storage layer on the first side surface, at least a part of the side surface of the control gate on the second side surface, and all of the side surface of the charge storage layer on the second side surface; and
a second insulating film formed on the first side surface adjacent to the contact material to cover first insulating film, the second side surface to cover first insulating film, and the upper surface. - View Dependent Claims (11, 12, 13, 15, 16, 17, 18)
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14. A non-volatile semiconductor memory device comprising:
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a plurality of element separation regions made of element separation insulating material buried in a plurality of trenches formed in a semiconductor body;
a stacked gate formed on the semiconductor body between the element separation regions, with a gate insulating film inserted therebetween, the stacked gate including a charge storage layer on the gate insulating film, a control gate on the charge storage layer, and a gap insulating film on the control gate; and
an interlayer insulating film formed above the semiconductor body;
wherein the charge storage layer is provided with a side surface thereof aligned with the element separation regions, and upper surfaces of the element separation regions below the control gate are higher than the upper surfaces of the element separation regions between control gates.
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Specification