High frequency semiconductor device

• US 20020171115A1
• Filed: 05/17/2002
• Published: 11/21/2002
• Est. Priority Date: 05/17/2001
• Status: Active Grant

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Nakatani, Toshifumi
• Granted Patent: US 6,903,459 B2
• Time in Patent Office: Days
• US Class Current: 257/499
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A high frequency (HF) semiconductor device includes a semiconductor substrate. An electroconductor layer is provided on the semiconductor substrate. A first insulator layer electrically insulates the electroconductor layer from the semiconductor substrate. N pieces of wires are provided on the semiconductor substrate, and N-phase signals (where N represents a positive integer greater than 2) are fed to the wires. A second insulator layer electrically insulates the wires from the electroconductor layer and the semiconductor substrate. N₁ pieces of the wires are provided on one side of the electroconductor layer (where N₁ represents 0 or a positive integer equaling or less than N). N₂ pieces of the wires are provided on the other side of the electroconductor layer (where N₂ represents 0 or a positive integer satisfying N₁+N₂=N).

Claims

1. A high frequency (HF) semiconductor device comprising:

a semiconductor substrate;

an electroconductor layer provided on the semiconductor substrate;

a first insulator layer for electrically insulating the electroconductor layer from the semiconductor substrate;

N pieces of wires which are provided on the semiconductor substrate and to which N-phase signals are fed (where N represents a positive integer greater than

     2);

a second insulator layer for electrically insulating the wires from the electroconductor layer and the semiconductor substrate;

wherein N₁ pieces of the wires are provided on one side of the electroconductor layer (where N₁ represents 0 or a positive integer equaling or less than N) and N₂ pieces of the wires are provided on the other side of the electroconductor layer (where N₂ represents 0 or a positive integer satisfying N₁+N₂=N).

2. An HF semiconductor device according to claim 1, wherein the wires are disposed to opposite to the electroconductor layer.

3. An HF semiconductor device according to claim 1, further comprising an HF-signal isolating section provided between the electroconductor layer and a ground to isolate an HF component flowing between the electroconductor layer and the ground.

4. An HF semiconductor device according to claim 3, wherein the HF-signal isolating section is an insulator.

5. An HF semiconductor device according to claim 3, wherein the HF-signal isolating section is a resistor.

6. An HF semiconductor device according to claim 3, wherein the HF-signal isolating section is an inductor.

7. An HF semiconductor device according to claim 3, wherein the HF-signal isolating section is formed such that an inductor and a capacitor are connected in parallel and a resonant frequency of the HF-signal isolating section is in the same frequency band of the signal fed to the wire.

8. An HF semiconductor device according to claim 3, wherein the HF-signal isolating section is a distributed-constant line having a line-length equivalent to an odd multiple of one quarter of a wavelength of the signal fed to the wire.

9. An HF semiconductor device according to claim 1, wherein the electroconductor layer is formed of one of metal, p-type doped polysilicon, and n-type doped polysilicon.

10. An HF semiconductor device according to claim 1, wherein the electroconductor layer is an electroconductive silicon layer that is different from the semiconductor.

11. An HF semiconductor device according to claim 1, wherein an inductor is connected between the wires.

12. An HF semiconductor circuit comprising a plurality of the HF semiconductor devices according to claim 3, wherein the electroconductor layers of the individual HF semiconductor devices are connected to one another via the HF-signal isolating section provided to isolate the HF component flowing between the electroconductor layer and the ground.

13. An HF semiconductor circuit comprising;

at least two units of the HF semiconductor devices according to claim 1, and a switch circuit section,

wherein the HF semiconductor devices are connected via the switch circuit section; and

the switch circuit section performs control electrically isolating the HF semiconductor devices from each other according to a control voltage.

14. An HF semiconductor circuit comprising;

at least two units of the HF semiconductor devices according to claim 1, and an amplifying circuit section,

wherein the HF semiconductor devices are connected via the amplifying circuit section; and

the amplifying circuit section amplifies a signal inputted from the one HF semiconductor device and outputs the signal to the other HF semiconductor device.

15. An HF semiconductor circuit comprising;

at least three units of the HF semiconductor devices according to claim 1, and a frequency converter circuit section,

wherein the HF semiconductor devices are connected to the frequency converter circuit section; and

the frequency converter circuit section performs a frequency conversion of an input signal inputted from each of the two HF semiconductor devices and outputs the signal to the other HF semiconductor devices.

16. An HF semiconductor circuit comprising;

the HF semiconductor device according to claim 1, and an oscillator circuit connected to the HF semiconductor device.

18. An HF semiconductor device according to claim 17, wherein the HF-signal isolating section is an insulator.

19. An HF semiconductor device according to claim 17, wherein the HF-signal isolating section is a resistor.

20. An HF semiconductor device according to claim 17, wherein the HF-signal isolating section is an inductor.

21. An HF semiconductor device according to claim 17, wherein

the HF-signal isolating section is formed such that an inductor and a capacitor are connected in parallel;

and

a resonant frequency of the HF-signal isolating section is in the same frequency band of the signal fed to the spiral wire.

22. An HF semiconductor device according to claim 17, wherein the HF-signal isolating section is a distributed-constant line having a line-length equivalent to an odd multiple of one quarter of a wavelength of the signal fed to the spiral wire.

23. An HF semiconductor device according to claim 17, wherein the electroconductor layer is formed of one of metal, p-type doped polysilicon, and n-type doped polysilicon.

24. An HF semiconductor device according to claim 17, wherein the electroconductor layer is an electroconductive silicon layer that is different from the semiconductor.

26. An HF semiconductor device according to claim 25, wherein the HF-signal isolating section is an insulator.

27. An HF semiconductor device according to claim 25, wherein the HF-signal isolating section is a resistor.

28. An HF semiconductor device according to claim 25, wherein the HF-signal isolating section is an inductor.

29. An HF semiconductor device according to claim 25, wherein:

the HF-signal isolating section is formed such that an inductor and a capacitor are connected in parallel; and

a resonant frequency of the HF-signal isolating section is in the same frequency band of the signal fed to one of the first to fourth wires.

30. An HF semiconductor device according to claim 25, wherein the HF-signal isolating section is a distributed-constant line having a line-length equivalent to an odd multiple of one quarter of a wavelength of the signal fed to one of the first to fourth wire.

31. An HF semiconductor device according to claim 25, wherein the electroconductor layer is formed of one of metal, p-type doped polysilicon, and n-type doped polysilicon.

32. An HF semiconductor device according to claim 25, wherein the electroconductor layer is an electroconductive silicon layer that is different from the semiconductor.

17. An HF semiconductor device comprising:

a semiconductor substrate;

an electroconductor layer provided on the semiconductor substrate;

a first insulator layer for electrically insulating the electroconductor layer from the semiconductor substrate;

a spiral wire provided on the semiconductor substrate opposite to the electroconductor layer;

a second insulator layer for electrically insulating the spiral wire from the electroconductor layer and the semiconductor substrate;

an HF-signal isolating section provided between the electroconductor layer and a ground potential to isolate an HF component flowing between the electroconductor layer and the ground potential; and

wherein cutouts are provided in positions of the electroconductor layer opposite to the spiral wire, and the cutouts are provided to radially extend from a position opposite to the spiral wire as a center.

25. An HF semiconductor device comprising:

a semiconductor substrate;

a first insulator layer provided on the semiconductor substrate;

an electroconductor layer provided on the first insulator layer;

a second insulator layer provided on the electroconductor layer;

a first wire provided on the second insulator layer opposite to the electroconductor layer;

a dielectric layer provided on the first wire;

a second wire provided on the dielectric layer opposite to the first wire; and

an HF-signal isolating section provided between the electroconductor layer and a ground to isolate an HF component flowing between the electroconductor layer and the ground.