Method for vapor deposition of a metal compound film

• US 20020172768A1
• Filed: 05/20/2002
• Published: 11/21/2002
• Est. Priority Date: 05/21/2001
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Endo, Kazuhiko, Saitoh, Motofumi
• Granted Patent: US 6,846,743 B2
• Time in Patent Office: Days
• US Class Current: 427/255.28
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

Claims

1. A method for depositing monoatomic layers of a metal compound to form a metal compound film on a substrate, comprising the step of irradiating alternately an organometal compound as a source material and either of oxygen radicals, nitrogen radicals and a mixture of oxygen radicals and nitrogen radicals as an oxidizing or nitriding agent.

2. The method as defined in claim 1, wherein said oxygen radicals are generated from oxygen gas.

3. The method as defined in claim 1, wherein said nitrogen radicals are generated from nitrogen gas.

4. The method as defined in claim 1, wherein said mixture is generated from nitrogen oxide gas including NO, N₂O and/or NO₂.

5. The method as defined in claim 1, wherein said irradiating step is performed under the condition of a partial pressure of water in a deposition chamber being equal to below 10⁻

4 Pa.

6. The method as defined in claim 1, wherein said irradiating step is performed under the condition that said substrate is maintained at a temperature which does not cause autolysis of said organometal compound.

7. The method as defined in claim 6, wherein said substrate is maintained at a temperature which allows said metal compound film to deposit as an amorphous film.

8. The method as defined in claim 7, wherein said organometal compound is tertiarybutoxyhafnium, and said substrate is maintained at a temperature between room temperature and 300 degrees C.

9. The method as defined in claim 1, wherein said substrate is a silicon substrate, and irradiating oxygen radicals and/or nitrogen radicals is performed prior to irradiating said organometal compound.

10. The method as defined in claim 1, wherein a mixture of plurality of organometal compounds is used as said source material.

11. The method as defined in claim 10, wherein a mixing ratio of said organometal compounds is changed in said mixture to control a composition of said metal compound film.

12. The method as defined in claim 1, wherein said organometal compound includes a compound selected from the group consisting of zirconium, hafnium, lanthanide compounds.

13. The method as defined in claim 1, wherein said organometal compound includes a compound selected from the group consisting of tertiarybutoxyhafnium, acetylacetonatehafnium, diethylaminohafnium, tertiarybutoxyzirconium, acetylacetatezirconium, and diethylaminozirconium.

14. The method as defined in claim 13, wherein said source material further includes trimethylaluminum or tetramethylsilane, and said metal compound film includes aluminate or silicate compound.

15. The method as defined in claim 12, wherein said organometal compound includes a dipivaloylmetanate compound of lanthanum, terbium, erbium, holmium, dysprosium and praseodymium.

16. The method as defined in claim 1, wherein said metal compound film is a gate insulating film of a MOSFET.

17. The method as defined in claim 1, wherein said metal compound film is a barrier film in one of multilayer interconnection films.

18. The method as defined in claim 17, wherein said organometal compound is tetradimethylaminotitanium or pentadimethylaminotantalum, said nitriding agent includes nitrogen radicals, and said metal compound film is a TiN or TaN film.