×

Method for fabricating ruthenium thin layer

  • US 20020173054A1
  • Filed: 05/01/2002
  • Published: 11/21/2002
  • Est. Priority Date: 05/03/2001
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a ruthenium (Ru) thin layer comprising:

  • loading a substrate into a reaction chamber for an atomic layer deposition;

    injecting RuXn into the reaction camber, wherein n is 2 or 3, and adsorbing the RuXn onto a surfaced substrate; and

    injecting a reductive reaction gas into the reaction chamber.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×