Method for fabricating ruthenium thin layer

• US 20020173054A1
• Filed: 05/01/2002
• Published: 11/21/2002
• Est. Priority Date: 05/03/2001
• Status: Active Grant

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kim, Younsoo
• Granted Patent: US 6,800,542 B2
• Time in Patent Office: Days
• US Class Current: 438/3
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/28562 Selective deposition

Abstract

A method for fabricating a Ru thin layer by using an atomic layer deposition (ALD) technique is disclosed. The method comprises the steps of loading a substrate into a reaction chamber for an atomic layer deposition, adsorbing RuX_n (wherein n is 2 or 3), which is a Ru precursor, onto the substrate and injecting a reductive reaction gas into the reaction chamber.

Claims

1. A method for fabricating a ruthenium (Ru) thin layer comprising:

loading a substrate into a reaction chamber for an atomic layer deposition;

injecting RuX_n into the reaction camber, wherein n is 2 or 3, and adsorbing the RuX_n onto a surfaced substrate; and

injecting a reductive reaction gas into the reaction chamber.

2. The method as recited in claim 1, wherein, X is a material selected from the group consisting of hydrogen (H), C₁˜

C₁₀ alkyl, C₂˜

C₁₀ alkenyl, C₁˜

C₈ alkoxy, C₆˜

C₁₂ aryl, -diketonates, cyclopentadienyl, C₁˜

C₈ alkylcyclopentadienyl and derivatives thereof including one or more halogen groups.

3. The method as recited in claim 1, wherein the method further comprises injecting a reductive reaction gas and purge gas before the RuX_n is adsorbed onto the surface of the substrate.

4. The method as recited in claim 1, wherein the reductive reaction gas is a gas selected from the group consisting of hydrazine (N₂H₄), ammonia (NH₃), NH₂R, NHR₂, NR₃, C₁˜

C₁₀ alkylhydrazine, C₁˜

C₁₀ dialkylhydrazine and a mixture gas thereof and R is a material selected from the group consisting of hydrogen, C₁˜

C₁₀ alkyl, C₂˜

C₈ alkenyl, C₁˜

C₈ alkoxy, C₆˜

C₁₂ aryl and derivatives thereof including one or more halogen groups.

5. The method as recited in claim 1, wherein the method further comprises removing non-reacted RuX_n by injecting a purge gas after injecting the RuX_n.

6. The method as recited in claim 5, wherein the purge gas is a gas selected from the group consisting of nitrogen, helium, argon, ammonia, hydrogen and mixtures thereof.

7. The method as recited in claim 1, wherein the method further comprises removing volatile by-products and non-reacted reaction gases by injecting the purge gas after injecting the reductive reaction gas.

8. The method as recited in claim 7, wherein the RuX_n, the reductive reaction gas and the purge gas are injected for a time period ranging from about 0.1 seconds to 5 about seconds.

9. The method as recited in claim 1, wherein the substrate is preheated at a temperature ranging from about 100°

C. to about 900°

C. before the RuX_n is injected into the reaction chamber.

12. A semiconductor device comprising a ruthenium thin layer fabricated in accordance with the method of claim 1.

10. A method for fabricating a ruthenium (Ru) thin layer comprising:

loading a substrate into a reaction chamber for an atomic layer deposition;

injecting RuX_n into the reaction chamber wherein n is 2 or 3 and adsorbing the RuX_n onto a surface of the substrate; and

injecting a reductive reaction gas into the reaction chamber, wherein the reductive reaction gas is a gas selected from the group consisting of hydrazine (N₂H₄), ammonia (NH₃), NH₂R, NHR₂, NR₃, C₁˜

C₁₀ alkylhydrazine, C₁˜

C₁₀ dialkylhydrazine and mixtures thereof and R is a material selected from the group consisting of hydrogen, C₁˜

C₁₀ alkyl, C₂˜

C₈ alkenyl, C₁˜

C₈ alkoxy, C₆˜

C₁₂ aryl and derivatives thereof including one or more halogen groups.

11. The method as recited in claim 10, wherein X is a material selected from the group consisting of hydrogen (H), C₁˜

C₁₀ alkyl, C₂˜

C₁₀ alkenyl, C₁˜

C₈ alkoxy, C₆˜

C₁₂ aryl, diketonates, cyclopentadienyl, C₁˜

C₈ alkylcyclopentadienyl and derivatives thereof including one or more halogen groups.

13. A semiconductor device comprising a ruthenium thin layer fabricated in accordance with the method of claim 10.