Method for producing organic thin-film device by use of facing-targets-type sputtering apparatus

• US 20020173068A1
• Filed: 04/09/2002
• Published: 11/21/2002
• Est. Priority Date: 05/14/2001
• Status: Active Grant

• Current Assignee: Junji Kido, ROHM Co., Ltd.
• Original Assignee: Junji Kido
• Inventors: Kido, Junji, Yokoi, Akira, Kadokura, Sadao
• Granted Patent: US 6,794,278 B2
• Time in Patent Office: Days
• US Class Current: 438/99
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Abstract

Disclosed is a method for forming a thin-film layer, such as a metallic film or a transparent conductive film, on a functional organic layer formed from an organic compound, by means of a sputtering method performed at a low discharge voltage and a low gas pressure, without imparting any damage to the surface of the organic layer. The thin-film layer is formed by use of a facing-targets-type sputtering apparatus including a pair of facing targets disposed a predetermined distance away from each other; an electron reflection electrode disposed on the periphery of each target; and magnetic field generation means disposed at the sides of each target. The magnetic field generation means generates a magnetic field extending from one target to the other so as to surround a confinement space provided between the paired targets, as well as a magnetic field having a portion parallel to the surface of each target in the vicinity of a peripheral edge portion of the target. When an AC-DC power containing a DC component and a high-frequency component is supplied as a sputtering power to the apparatus, the thin-film layer can be formed at a lower discharge voltage and a lower gas pressure.

Claims

1. A method for producing an organic thin-film device having a structure including a functional organic layer formed from an organic compound and a thin-film layer deposited onto the organic layer, the method comprising:

forming the thin-film layer by use of a facing-targets-type sputtering apparatus including a pair of facing targets disposed a predetermined distance away from each other;

an electron reflection electrode disposed at the periphery of each target so as to face a confinement space provided between the paired targets; and

magnetic field generation means disposed at the lateral sides of each target, wherein the magnetic field generation means generates a magnetic field extending from one target to the other so as to surround the confinement space, as well as a magnetic field having a portion parallel to the surface of each target in the vicinity of a peripheral edge portion of the target.

2. A method for producing an organic thin-film device according to claim 1, wherein the thin-film layer is formed at a discharge voltage of 300 V or less.

3. A method for producing an organic thin-film device according to claim 1, wherein the thin-film layer is formed at a gas pressure of 0.3 Pa or less.

4. A method for producing an organic thin-film device according to claim 1, wherein the facing-targets-type sputtering apparatus is a box-type facing-targets-type sputtering apparatus comprising a cubic or rectangular parallelepiped box-type sputtering unit including targets disposed on a pair of facing faces, an opening provided in a face located laterally to the paired faces, and the three remaining faces, which are closed;

wherein a member is disposed so as to face the opening and the thin-film layer is formed on the member.

5. A method for producing an organic thin-film device according to claim 1, wherein the facing-targets-type sputtering apparatus includes a AC-DC sputtering power supply which supplies power containing a DC component and a high-frequency component.

6. A method for producing an organic thin-film device according to claim 1, wherein the thin-film layer is an inorganic layer formed from an inorganic substance.

7. A method for producing an organic thin-film device according to claim 6, wherein the inorganic layer is an electrode formed from a conductive material.

8. A method for producing an organic thin-film device according to claim 6, wherein the inorganic layer is an insulating protective layer formed from an inorganic substance.

9. A method for producing an organic thin-film device according to claim 6, wherein the organic thin-film device is an organic electroluminescent device.

10. A method for producing an organic thin-film device according to claim 9, wherein the functional organic layer is any one selected from a group consisting of a light-emitting layer, an electron-transporting organic layer, an electron-transporting light-emitting layer, and a metal-doped organic layer formed from an organic compound doped with a metal serving as an electron donor, the metal-doped organic layer being provided between a negative electrode and the light-emitting layer, the electron-transporting organic layer, or the electron-transporting light-emitting layer.

11. A method for producing an organic thin-film device according to claim 9, wherein the inorganic layer is an electrode formed from a metallic film or a transparent conductive film.

12. A method for producing an organic thin-film device according to claim 11, wherein the transparent conductive film is an indium-tin oxide film.