Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring

• US 20020173242A1
• Filed: 10/30/2001
• Published: 11/21/2002
• Est. Priority Date: 04/19/1999
• Status: Abandoned Application

• Current Assignee: Ebara Corporation
• Original Assignee: Mitsubishi Materials Corporation
• Inventors: Chin, Scott, Wang, Huey-Ming, Moloney, Gerard S., Dickey, Tanlin K., Geraghty, John J., Dyson, William Jr.
• Application Number:
  US10/021,372
• Publication Number:
  US 20020173242A1
• Time in Patent Office: Days
• US Class Current: 451/41
• CPC Class Codes: B24B 37/30 for single side lapping of plane surfaces
• CPC Class Codes: B24B 37/32 Retaining rings
• CPC Class Codes: B24B 49/16 taking regard of the load

Abstract

The invention provides structure and method for achieving a uniformly polished or planarized substrate such as a semiconductor wafer including achieving substantially uniform polishing between the center of the semiconductor wafer and the edge of the wafer. In one aspect the invention provides a polishing apparatus including a housing, a carrier for mounting a substrate to be polished, a retaining ring circumscribing the carrier for retaining the substrate, a first coupling attaching the retaining ring to the carrier such that the retaining ring may move relative to the carrier, a second coupling attaching the carrier to the housing such that the carrier may move relative to the housing, the housing and the first coupling defining a first pressure chamber to exert a pressure force against the retaining ring, and the housing and the second coupling defining a second pressure chamber to exert a pressure force against the subcarrier. In one embodiment, the couplings are diaphragms. The invention also provides a retaining ring having a special edge profile that assists in smoothing an pre-compressing the polisihng pad to increase polisihng uniformity. A method for polisihing and a semiconductor manufacture is also provided.

Claims

1. A polishing apparatus comprising:

a housing;

a disc shaped carrier for mounting a substrate to be polished;

a retaining ring substantially circumscribing said carrier for retaining said substrate in a pocket formed by said retaining ring and a surface of said carrier;

a first flexible coupling attaching said retaining ring to said carrier such that said retaining ring may translate in at least one dimension and tilt about an axis relative to said carrier;

a second flexible coupling attaching said carrier to said housing such that said carrier may translate in at least one dimension and tilt about an axis relative to said housing;

said housing and said first flexible coupling defining a first chamber in fluid communication with a first source of pressurized gas such that when gas at a first pressure is communicated to said first chamber a first force is exerted against said retaining ring; and

said housing and said second flexible coupling defining a second chamber in fluid communication with a second source of pressurized gas such that when gas at a second pressure is communicated to said second chamber a second force is exerted against said subcarrier.

2. The polishing apparatus in claim 1, wherein said translation and tilt of said carrier is independent of said translation and tilt of said retaining ring.

3. The polishing apparatus in claim 1, wherein said translation and tilt of said carrier is coupled to a predetermined extent with said translation and tilt of said retaining ring.

4. The polishing apparatus in claim 1, wherein said translation and tilt of said carrier and said translation and tilt of said retaining ring each have a component that is independent of the other and a component that is dependent on the other.

5. The polishing apparatus in claim 4, wherein the extent to which said translation and tilt components of said carrier and said ring are coupled is dependent on material characteristics of said first and second flexible couplings and geometry characteristics of said attachments.

6. The polishing apparatus in claim 5, wherein said material characteristics that affect the extent of coupling include elasticity, stiffness, and spring constant;

and said geometry characteristics include distance between attachment locations between said ring and said carrier and distance between attachment locations between said carrier and said housing;

the geometry of the interface between said first and second diaphragms and adjacent structures of said housing, said retaining ring, and said carrier.

7. The polishing apparatus in claim 1, wherein said first pressure and said second pressure are different pressures.

8. The polishing apparatus in claim 1, wherein said first pressure and said second pressure are substantially equal pressures.

9. The polishing apparatus in claim 1, wherein said first pressure and said second pressure are substantially equal pressures and the force exerted on said retaining ring and on said carrier are determined by the surface area of said retaining ring and said carrier over which each said pressure is applied.

10. The polishing apparatus in claim 1, wherein said first pressure and said second pressure may independently be positive pressure or negative pressure (vacuum).

11. The polishing apparatus in claim 10, wherein the depth of a pocket formed by a surface of said carrier and an inner cylindrical surface of said retaining ring is established during a substrate loading phase by said first pressure and said second pressure.

12. The polishing apparatus in claim 1, wherein said substrate comprises a semiconductor wafer.

13. The polishing apparatus in claim 1, wherein said retaining ring further comprises:

a lower surface for contacting an external polishing pad during polishing;

an inner cylindrical surface disposed adjacent to an outer circumferential surface of said carrier and the periphery of a substrate mounting surface of said carrier, said inner cylindrical surface and said carrier mounting surface periphery forming a pocket for maintaining said substrate during polishing; and

a pad conditioning member disposed at the lower outer radial portion of said retaining ring where said retaining ring contacts said pad during polishing and defining a shape profile transitioning between a first planar surface substantially parallel to a plane of said polishing pad and a second planar surface substantially perpendicular to said polishing pad.

14. The polishing apparatus of claim 13, wherein said pad conditioning member is characterized by presenting an angle substantially between 15 degrees and substantially 25 degrees out of parallel with respect to the nominal plane of said polishing pad.

15. The polishing apparatus of claim 13, wherein said pad conditioning member is characterized by presenting an angle substantially between 18 degrees and substantially 22 degrees out of parallel with respect to the nominal plane of said polishing pad.

16. The polishing apparatus of claim 13, wherein said pad conditioning member is characterized by presenting an angle substantially 20 degrees out of parallel with respect to the nominal plane of said polishing pad.

17. The polishing apparatus of claim 13, wherein said pad conditioning member is characterized by presenting an angle substantially 20 degrees out of parallel with respect to the nominal plane of said polishing pad;

and

further characterized by presenting a second angle of substantially 70 degrees out of parallel with respect to the nominal plane of said polishing pad.

18. The polishing apparatus of claim 13, further characterized in that said portion presenting a substantially 20 degree angle extends a distance of between 0.03 and 0.04 inches from said lower planar retaining ring surface, and said portion presenting a substantially 70 degree angle extends to at least a distance of about 0.2 inches from said lower planar retaining ring surface

19. The polishing apparatus of claim 13, wherein said pad conditioning member is characterized by:

presenting an angle substantially between 15 degrees and substantially 25 degrees out of parallel with respect to a nominal plane of said polishing pad; and

presenting a second substantially between 65 degrees and substantially 75 degrees out of parallel with respect to said nominal plane of said polishing pad.

20. The polishing apparatus in claim 1, wherein said first pressure on said carrier is in the range between substantially 1.5 psi and substantially 10 psi and the second pressure on said retaining ring is in the range between substantially 1.5 psi and substantially 9.0 psi.

21. The polishing apparatus in claim 1, wherein said flexible coupling comprises a diaphragm.

22. The polishing apparatus in claim 1, wherein said diaphragm is formed from a material selected from the group consisting of:

metal, plastic, rubber, polymer, titanium, stainless-steel, carbon fibre composite, and combinations thereof.

23. The polishing apparatus in claim 1, wherein said carrier is formed from ceramic material.

25. The substrate retaining ring of claim 24, wherein said pad conditioning member is characterized by presenting an angle substantially between 15 degrees and substantially 25 degrees out of parallel with respect to the nominal plane of said polishing pad.

26. The polishing apparatus of claim 24, wherein said pad conditioning member is characterized by presenting an angle substantially between 18 degrees and substantially 22 degrees out of parallel with respect to the nominal plane of said polishing pad.

27. The substrate retaining ring of claim 24, wherein said pad conditioning member is characterized by presenting an angle substantially 20 degrees out of parallel with respect to the nominal plane of said polishing pad.

28. The substrate retaining ring of claim 24, wherein said pad conditioning member is characterized by presenting an angle substantially 20 degrees out of parallel with respect to the nominal plane of said polishing pad;

and

further characterized by presenting a second angle of substantially 70 degrees out of parallel with respect to the nominal plane of said polishing pad.

29. The substrate retaining ring of claim 24, further characterized in that said portion presenting a substantially 20 degree angle extends a distance of between 0.03 and 0.04 inches from said lower planar retaining ring surface, and said portion presenting a substantially 70 degree angle extends to at least a distance of about 0.2 inches from said lower planar retaining ring surface

30. The substrate retaining ring of claim 24, wherein said pad conditioning member is characterized by:

presenting an angle substantially between 15 degrees and substantially 25 degrees out of parallel with respect to a nominal plane of said polishing pad; and

presenting a second substantially between 65 degrees and substantially 75 degrees out of parallel with respect to said nominal plane of said polishing pad.

24. A substrate retaining ring for a polishing machine, said retaining ring comprising:

a lower surface for contacting an external polishing pad during polishing;

an inner cylindrical surface disposed adjacent to an outer circumferential surface of said carrier and the periphery of a substrate mounting surface of said carrier, said inner cylindrical surface and said carrier mounting surface periphery forming a pocket for maintaining said substrate during polishing; and

a pad conditioning member disposed at the lower outer radial portion of said retaining ring where said retaining ring contacts said pad during polishing and defining a shape profile transitioning between a first planar surface substantially parallel to a plane of said polishing pad and a second planar surface substantially perpendicular to said polishing pad.

31. A method of planarizing a semiconductor wafer, said method including:

supporting a back-side surface of said wafer with a wafer support subcarrier;

applying a polishing force against said support subcarrier to press a front surface of said wafer against a polishing pad;

restraining movement of said wafer from said support subcarrier during polishing with a retaining ring circumferentially disposed around a portion of said subcarrier and said wafer; and

applying a pad conditioning force against said retaining ring to press a front surface of said retaining ring against said polishing pad.

32. The method in claim 31, wherein said pad conditioning force is applied independently of said polishing force.

33. The method in claim 31, wherein said pad conditioning force is coupled to said polishing force.

34. The method in claim 31, wherein said pad conditioning force is applied to a first area of said pad in a direction orthogonal to a plane defined by said pad surface, to a second area of said pad in a direction having a first fractional component orthogonal to said plane and having a second fractional component parallel to said plane.

35. An article of manufacture comprising a semiconductor wafer polished according to the method of claim 31.

36. An article of manufacture comprising a semiconductor wafer planarized according to the method of claim 34.