Polyvinyl acetal composition roller brush with abrasive outer surface

• US 20020173259A1
• Filed: 10/11/2001
• Published: 11/21/2002
• Est. Priority Date: 04/20/2001
• Status: Active Grant

• Current Assignee: Hydrofera, LLC (Essity AB)
• Original Assignee: Tolland Development Company, LLC
• Inventors: Drury, Thomas J.
• Granted Patent: US 6,802,877 B2
• Time in Patent Office: Days
• US Class Current: 451/526
• CPC Class Codes: H01L 21/67046 using mainly scrubbing means, e.g. brushes
• CPC Class Codes: Y10T 428/249978 Voids specified as micro
• CPC Class Codes: Y10T 428/249979 Specified thickness of void-containing component [absolute or relative] or numerical cell dimension
• CPC Class Codes: Y10T 428/249989 Integrally formed skin

Abstract

A semiconductor polishing device having a substantially cylindrical roller body made of polyvinyl acetal with a uniform material porosity having a mean flow pore pressure ranging from about 0.30 PSI to about 0.35 PSI with 80% of its pores ranging from 7 to 40 microns in size coated with a low viscosity adhesive composition of an appropriately formulated aliphatic or aromatic difunctional polyether urethane methacrylate or formulated multifunctional allphatic urethane acrylate and abrasive particles to form an adhesive skin of about 1 micron in thickness. The abrasive particles typically have a particle size ranging from about 0.05 to about 7 microns and a Mohs'"'"' hardness of at least about 7.

Claims

1. A polishing device comprising a body made of porous polyvinyl acetal material having a uniform pore size throughout the core material of the body with over 80% of the pores being below 40 microns in diameter, said body being coated with a low viscosity slurry comprising a hydrophillic urethane based adhesive and mixed abrasive particles of polishing materials which are cured to said body to form a thin abrasive skin which follows the contour of the pores of an outer surface of said body.

2. A polishing device as claimed in claim 1 wherein said abrasive particles are selected from the group consisting of Al₂O₃ and SiO₂ ranging in size from 0.1 microns to about 100.0 microns.

3. A polishing device as claimed in claim 1 wherein said abrasive particles are selected from the group consisting of Al₂O₃ and SiO₂ ranging in size 0.5 microns to about 7.0 microns.

4. A polishing device as claimed in claim 1 wherein said abrasive particles are selected from the group consisting of aluminum oxide, heat treated aluminum oxide, white fused aluminum oxide, black silicon carbide, green silicon carbide, silicon nitride, titanium diboride, boron carbide, tungsten carbide, titanium carbide, tantalum carbide, diamond, silica, silicon dioxide, iron oxide, chromia, ceria, cerium oxide, manganese dioxide, zirconia, titania, silicates, tin oxide, cubic boron nitride, garnet, alumina zirconia, zirconium oxide, sol gel abrasive particles, and combinations thereof.

5. A polishing device as claimed in claim 1 wherein said polyvinyl acetal material has an average pore size of about 20 microns.

6. A polishing device as claimed in claim 1 wherein the weight of the adhesive particles is preferably less than 5% of the wight of said slurry.

7. A polishing device as claimed in claim 1 wherein said polishing device is a pad.

8. A polishing device as claimed in claim 1 wherein said polishing device is a roller.

9. A polishing device as claimed in claim 1 wherein said polishing device is a disk.

10. A polishing device as claimed in claim 1 wherein said cured skin is less than 1 millimeter in thickness.

11. A polishing device as claimed in claim 1 wherein the weight of the adhesive particles range from 5% to 80% of the weight of said slurry.

13. A semiconductor polishing device as claimed in claim 12 wherein said abrasive particles are selected from the group consisting of aluminum oxide, heat treated aluminum oxide, white fused aluminum oxide, black silicon carbide, green silicon carbide, silicon nitride, titanium diboride, boron carbide, tungsten carbide, titanium carbide, tantalum carbide, diamond, silica, silicon dioxide, iron oxide, chromia, ceria, cerium oxide, manganese dioxide, zirconia, titania, silicates, tin oxide, cubic boron nitride, garnet, alumina zirconia, zirconium oxide, sol gel abrasive particles, and combinations thereof.

14. A semiconductor polishing device as claimed in claim 12 wherein said adhesive is selected from the group consisting of allphatic polyether urtheane methacrylate, aromatic difunctional polyether urethane methacrylate and allphatic urethane acrylate.

15. A semiconductor polishing device as claimed in claim 12 wherein said abrasive skin has composite particles having a size of about 1.2 microns.

16. A semiconductor polishing device as claimed in claim 12 wherein said abrasive skin is about 1.0 microns in thickness.

19. A semiconductor cleaning device as claimed in claim 18 wherein said metal is an abrasive material particle selected from the group consisting of aluminum oxide, heat treated aluminum oxide, white fused aluminum oxide, black silicon carbide, green silicon carbide, silicon nitride, titanium diboride, boron carbide, tungsten carbide, titanium carbide, tantalum carbide, diamond, silica, silicon dioxide, iron oxide, chromia, ceria, cerium oxide, manganese dioxide, zirconia, titania, silicates, tin oxide, cubic boron nitride, garnet, alumina zirconia, zirconium oxide, sol gel abrasive particles, and combinations thereof.

12. A semiconductor polishing device comprising a core body made of porous polyvinyl acetal material having a cylindrical roller shape and a outer surface, said material having a uniform pore size throughout with at least 80% of the pores ranging from about 7 microns to about 40 microns in diameter, a slurry of adhesive hydrophilic polymer of low viscosity and abrasive particles ranging from 0.5 to about 100.0 microns and comprising from 5% to 80% of the slurry by weight, said slurry being coated and cured on said outer surface of said cylindrical roller forming an abrasive skin.

17. A semiconductor polishing device comprising a substantially cylindrical roller body made of polyvinyl acetal with its core having uniform material porosity with 80% of its pores ranging from 7 to 40 microns and an abrasive particle and low viscosity urethane adhesive composite skin cured to said core, said adhesive being selected from the group consisting of allphatic polyether urtheane methacrylate, aromatic difunctional polyether urethane methacrylate and allphatic urethane acrylate, said skin ranging in thickness from 0.5 to 7.0 microns.

18. A semiconductor polishing device comprising a core body made of porous polyvinyl acetal material having a cylindrical roller shape and a outer surface, said material having a uniform pore size throughout with at least 80% of the pores ranging from about 7 microns to about 40 microns in diameter with a fluid flow through rate which does not distort the roller during the polishing process, a slurry comprising an adhesive of polyvinyl acetal material mixed with water having a viscosity less than the viscosity of said core material mixed with a composite abrasive material, said composite abrasive material comprising particles of abrasive material mounted in carrier particles of polyvinyl acetal, said slurry being coated and cured on said outer surface of said cylindrical roller to form an abrasive skin.

20. A process of making a semiconductor polishing roller comprising of the steps of

a. molding a roller of clean PVA sponge with over 80% of the pores ranging from about 7 microns to about 40 microns in diameter;

b. applying a coating of a slurry comprising an adhesive having a low viscosity and abrasive particles to the outer surface of said roller; and

c. curing said slurry skin to said roller body with ultra violet light forming a unitary roller device with a thin abrasive skin.

21. A process of making a semiconductor polishing roller as claimed in claim 20 wherein said curing takes place over a period ranging from 0.1 minutes to 5 minutes.

22. A process of making a semiconductor polishing roller as claimed in claim 20 wherein said curing takes place in about 1 minute at about 300 watts.

23. A process of making a semiconductor polishing roller as claimed in claim 20 wherein said coating applied is less than 0.2 mm in thickness.

24. A claim according to claim 20 wherein said abrasive material is selected from the group consisting of aluminum oxide, heat treated aluminum oxide, white fused aluminum oxide, black silicon carbide, green silicon carbide, silicon nitride, titanium diboride, boron carbide, tungsten carbide, titanium carbide, tantalum carbide, diamond, silica, silicon dioxide, iron oxide, chromia, ceria, cerium oxide, manganese dioxide, zirconia, titania, silicates, tin oxide, cubic boron nitride, garnet, alumina zirconia, zirconium oxide, sol gel abrasive particles and combinations thereof.

25. A claim according to claim 20 wherein said low viscosity adhesive is selected from the group consisting of formulated allphatic polyether urethane methacrylate, aromatic difunctional polyether urethane methacrylate;

formulated multifunctional allphatic urethane acrylate and combinations thereof.

26. A process of making a semiconductor cleaning device comprising of the steps of:

a. precasting a product of clean PVA sponge;

b. preparing a coating mixture of cleaning material and PVA resin and water slurry;

c. curing the coating mixture to form a composite polymer;

d. grinding the composite polymer into a predetermined particle size;

e. coating said precast PVA sponge product with a slurry of low viscosity PVA;

f. placing the ground composite particles on the surface of said coated precast PVA product; and

g. curing said coated precast product to obtain an outer skin to which the ground composite particles are bound.