High speed electron tunneling device and applications
First Claim
1. A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies, said detector having an output and exhibiting a given responsivity, said detector comprising:
- a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, wherein the first non-insulating layer is formed of a metal, and wherein said first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure, said arrangement including at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at the output, said electrical signal having an intensity which depends on the given responsivity.
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Accused Products
Abstract
A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers, which layers are spaced apart such that a given voltage can be applied thereacross. The first non-insulating layer is formed of a metal, and the first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies. The detector further includes an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between the first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure. The arrangement includes at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted at the output to an electrical signal having an intensity which depends on the given responsivity.
20 Citations
107 Claims
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1. A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies, said detector having an output and exhibiting a given responsivity, said detector comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, wherein the first non-insulating layer is formed of a metal, and wherein said first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure, said arrangement including at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at the output, said electrical signal having an intensity which depends on the given responsivity. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A detector array having an output and comprising a plurality of detectors, each one of said plurality of detectors having a detector area and exhibiting a given responsivity, each one of said plurality of detectors being configured for detecting electromagnetic radiation incident on the detector area over a desired range of frequencies and including:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, wherein the first non-insulating layer is formed of a metal, and wherein said first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure, said arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at the output, said electrical signal having an intensity which depends on the given responsivity, said plurality of detectors being arranged such that the detector array is capable of detecting electromagnetic radiation over a larger spatial area than the detector area of each one of said plurality of detectors. - View Dependent Claims (8, 9, 10)
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11. An emitter for providing electromagnetic radiation of a desired frequency at an output, said emitter comprising:
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a) a voltage source for providing a bias voltage;
b) first and second non-insulating layers spaced apart from one another such that the bias voltage can be applied across the first and second non-insulating layers; and
c) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the bias voltage, said arrangement being further configured to exhibit a given value of negative differential resistance when the bias voltage is applied across the first and second non-insulating layers, said arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that an oscillation in the transport of electrons results, said oscillation having an oscillation frequency equal to the desired frequency due to the negative differential resistance and causing an emission of electromagnetic radiation of the desired frequency at the output. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 20, 21, 22, 24, 26, 27, 29, 30, 31, 32)
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19. An emitter array having and output and comprising a plurality of emitters, each one of said plurality of emitters providing electromagnetic radiation at a given frequency and including:
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a) a voltage source for providing a bias voltage;
b) first and second non-insulating layers spaced apart from one another such that the bias voltage can be applied across the first and second non-insulating layers; and
c) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the bias voltage, said arrangement being further configured to exhibit a given value of negative differential resistance when the bias voltage is applied across the first and second non-insulating layers, said arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that an oscillation in the transport of electrons results, said oscillation having an oscillation frequency equal to the given frequency due to the negative differential resistance and causing an emission of electromagnetic radiation of the given frequency at the output.
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23. An emitter for providing electromagnetic radiation at an output, said emitter comprising:
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a) first and second non-insulating layers spaced apart from one another such that a bias voltage can be applied across the first and second non-insulating layers; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the bias voltage, said arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of hot electron tunneling to cause an emission of electromagnetic radiation at the output.
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25. A modulator for modulating an input electromagnetic radiation incident thereon and providing a modulated electromagnetic radiation at an output, said modulator comprising:
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a) a voltage source for providing a modulation voltage, which modulation voltage is switchable between first and second voltage values;
b) first and second non-insulating layers spaced apart from one another such that the modulation voltage can be applied across the first and second non-insulating layers, said first and second non-insulating layers being configured to form an antenna structure for absorbing a given fraction of the input electromagnetic radiation with a given value of absorptivity, while a remainder of the input electromagnetic radiation is reflected by the antenna structure, wherein absorptivity is defined as a ratio of an intensity of the given fraction to a total intensity of the input electromagnetic radiation; and
c) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the modulation voltage, said arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, with respect to the modulation voltage, said arrangement being further configured to cooperate with the first and second non-insulating layers such that the antenna exhibits a first value of absorptivity, when modulation voltage of the first voltage value is applied across the first and second non-insulating layers, and exhibits a distinct, second value of absorptivity, when modulation voltage of the second voltage value is applied across the first and second non-insulating layers, causing the antenna structure to reflect a different amount of the input electromagnetic radiation to the output as modulated electromagnetic radiation having a given value of contrast ratio, with respect to the modulation voltage, said contrast ratio being defined as a ratio of said first value of absorptivity to said second value of absorptivity.
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28. A modulator assembly for receiving a modulation signal, modulating an input electromagnetic radiation and providing an output electromagnetic radiation, said modulator assembly comprising:
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a) a voltage source for providing a bias voltage;
b) first and second non-insulating layers spaced apart from one another such that the bias voltage can be applied across the first and second non-insulating layers, and wherein said first and second non-insulating layers are configured to form a first antenna structure for receiving the modulation signal and converting the modulation signal so received into a modulation voltage, which modulation voltage is also applied across the first and second non-insulating layers;
c) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the modulation voltage, arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling; and
d) a second antenna structure having an absorptance value, which absorptance value depends on the aforementioned modulation voltage, wherein said second antenna structure is configured to receive and selectively absorb said input electromagnetic radiation in proportion to the absorptance value so as to produce the output electromagnetic radiation.
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33. A field effect transistor for receiving an external signal, switching an input signal according to the received, external signal and providing an output signal, said external signal being switchable between a first value and a second value, said field effect transistor comprising:
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a) a diode structure including i) a source electrode for receiving said input signal, ii) a drain electrode spaced apart from said source electrode such that a given voltage can be applied across the source and drain electrodes, and iii) an arrangement disposed between the source and drain electrodes and configured to serve as a transport of electrons between said source and drain electrodes, said arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling with a given value of a tunneling probability, b) a shielding layer at least partially surrounding said diode structure; and
c) a gate electrode disposed adjacent to said shielding layer, said gate electrode being configured to receive said external signal and to apply said external signal as said given voltage across said source and drain electrodes such that, when said first value of external signal is received at the gate electrode, a first signal value is provided as the output signal at the drain electrode and, when said second value of external signal is received at the gate electrode, a second signal value is provided as the output signal at the drain electrode and said output signal exhibits a given output ratio, which output ratio is defined as the ratio of the first signal value to the second signal value. - View Dependent Claims (34, 35, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60)
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36. A junction transistor comprising:
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a) an emitter electrode;
b) a base electrode spaced apart from said emitter electrode such that a given voltage can be applied across the emitter and base electrodes and, consequently, electrons are emitted by the emitter electrode toward the base electrode;
c) a first tunneling structure disposed between said emitter and base electrodes and configured to serve as a transport of electrons between said emitter and base electrodes, said first tunneling structure including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling with a tunneling probability, wherein said tunneling probability depends on said given voltage;
d) a collector electrode spaced apart from said base electrode; and
e) a second tunneling structure disposed between said base and collector electrodes and configured to serve as a transport, between said base and collector electrodes, of at least a portion of said electrons emitted by said emitter electrode such that the portion of the electrons is collected by said collector electrode with a collection efficiency, wherein said transport of electrons includes, at least in part, transport by means of tunneling.
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37. An optoelectronic amplification element for receiving an input electromagnetic radiation, which input electromagnetic radiation has an input intensity, and producing an output electromagnetic radiation, which output electromagnetic radiation has an output intensity, said optoelectronic amplification element comprising:
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A) a detector for detecting an input electromagnetic radiation incident thereon, said detector including;
1) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, wherein the first non-insulating layer is formed of a metal, and wherein said first and second non-insulating layers are configured to form an antenna structure for receiving said input electromagnetic radiation, and 2) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the input electromagnetic radiation being received at the antenna structure, said arrangement including at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal switchable between at least a first value and a second value;
B) a field effect transistor for receiving said electrical signal, switching an input signal according to the received, electrical signal and providing a modulation signal, said field effect transistor including;
1) a diode structure including a) a source electrode for receiving said input signal, b) a drain electrode spaced apart from said source electrode such that a given voltage can be applied across the source and drain electrodes, and c) an arrangement disposed between the source and drain electrodes and configured to serve as a transport of electrons between said source and drain electrodes, said arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling with a given value of a tunneling probability, 2) a shielding layer at least partially surrounding said diode structure; and
3) a gate electrode disposed adjacent to said shielding layer, said gate electrode being configured to receive said electrical signal and to apply said electrical signal as said given voltage across said source and drain electrodes such that, when said first value of electrical signal is received at the gate electrode, a first signal value is provided as the modulation signal at the drain electrode and, when said second value of electrical signal is received at the gate electrode, a second signal value is provided as the modulation signal at the drain electrode; and
C) an emitter for providing output electromagnetic radiation, said emitter including;
1) first and second non-insulating layers spaced apart from one another, said first non-insulating layer being configured to receive said modulation signal and to apply said modulation signal as a bias voltage across the first and second non-insulating layers; and
2) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the bias voltage, said arrangement being further configured to exhibit a given value of negative differential resistance when the bias voltage is applied across the first and second non-insulating layers, said arrangement including at least a first layer of an amorphous material configured such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that an oscillation in the transport of electrons results due to the negative differential resistance and causes an emission of said output electromagnetic radiation, wherein said output intensity of said output electromagnetic radiation is substantially larger than said input intensity of said input electromagnetic radiation.
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38. An optoelectronic mixer element for simultaneously receiving at least two distinct frequencies of electromagnetic radiation and producing an output signal having a beat frequency, which beat frequency is a combination of said two distinct frequencies, said optoelectronic mixer element comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, wherein the first non-insulating layer is formed of a metal, and wherein said first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation of said two distinct frequencies; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers as a result of the two distinct frequencies of electromagnetic radiation being received at the antenna structure, said arrangement including at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted to the output signal having said beat frequency.
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39. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, the first non-insulating layer being formed of a semiconductor material and the second non-insulating layers being formed of a metal; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including i) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, ii) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity.
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61. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, the first non-insulating layer being formed of a semiconductor material and the second non-insulating layers being formed of a metal; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including i) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of asymmetry in said transport of electrons, with respect to said given voltage, ii) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said asymmetry in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of asymmetry. - View Dependent Claims (62, 63)
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64. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, the first non-insulating layer being formed of a semiconductor material and the second non-insulating layers being formed of a metal; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including i) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given value of differential resistance in said transport of electrons, with respect to said given voltage, ii) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said differential resistance in the transport of electrons, with respect to said given voltage, is increased over and above said given value of differential resistance. - View Dependent Claims (65, 66)
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67. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, the first non-insulating layer being formed of a semi-metal and the second non-insulating layers being formed of a metal; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including i) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, ii) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity.
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68. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, the first non-insulating layer being formed of a superconductor and the second non-insulating layers being formed of a metal; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including i) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, ii) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity.
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69. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, the first non-insulating layer forming a quantum well and the second non-insulating layers being formed of a metal; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including i) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, ii) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity.
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70. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including i) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, ii) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity, and iii) a third layer of material configured to further increase said nonlinearity in the transport of electrons, with respect to said given voltage, over and above said given degree of nonlinearity. - View Dependent Claims (71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94)
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95. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including i) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, and ii) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of hot electron tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity.
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96. In a device including (i) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers, and (ii) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including a first layer of an amorphous material, such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons between the non-insulating layers, with respect to said given voltage, a method for increasing said nonlinearity in said transport of electrons, with respect to said given voltage, over and above said given degree of nonlinearity, said method comprising the step of:
positioning a second layer of material between said first and second non-insulating layers, said second layer of material being formed of a crystalline insulator and configured to cooperate with said first layer of amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling.
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97. In a device including (i) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers;
- and (ii) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including (a) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, and (b) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity, a method for further increasing said nonlinearity in said transport of electrons, said method comprising the step of;
positioning a third layer of material between said first and second non-insulating layers. - View Dependent Claims (98, 99, 100, 101, 102, 103, 104, 105, 106, 107)
- and (ii) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between said first and second non-insulating layers, said arrangement including (a) a first layer of an amorphous material such that using only said first layer of the amorphous material would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, and (b) a second layer of material configured to cooperate with said first layer of the amorphous material such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity, a method for further increasing said nonlinearity in said transport of electrons, said method comprising the step of;
Specification