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Power semiconductor devices having retrograded-doped transition regions that enhance breakdown voltage characteristics and methods of forming same

  • US 20020175351A1
  • Filed: 04/11/2001
  • Published: 11/28/2002
  • Est. Priority Date: 04/11/2001
  • Status: Active Grant
First Claim
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1. A vertical power device, comprising:

  • a semiconductor substrate having first and second trenches and a drift region of first conductivity type therein that extends into a mesa defined by the first and second trenches;

    first and second insulated electrodes in the first and second trenches;

    first and second base regions of second conductivity type that extend adjacent sidewalls of the first and second trenches, respectively, and in the mesa;

    first and second source regions of first conductivity type in said first and second base regions, respectively;

    an insulated gate electrode that extends on a surface of said semiconductor substrate and opposite said first base region; and

    a transition region of first conductivity type that extends between said first and second base regions, forms a non-rectifying junction with the drift region and has a vertically retrograded first conductivity type doping profile relative to the surface.

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