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Active plate

  • US 20020176031A1
  • Filed: 05/20/2002
  • Published: 11/28/2002
  • Est. Priority Date: 05/23/2001
  • Status: Active Grant
First Claim
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1. An active plate, comprising:

  • a substrate;

    a first metallisation layer defining gate electrodes and further defining first storage capacitor electrodes extending longitudinally across the substrate;

    a second metallisation layer defining source and drain electrodes and second storage capacitor electrodes;

    a semiconductor body layer forming thin film transistor bodies between the source and drain electrodes; and

    an insulation layer between first and second storage capacitor electrodes, wherein the drain electrode extends across the width of the gate electrode, and the second storage capacitor electrode overlaps the lateral edges of the first storage capacitor electrode.

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