Active matrix substrate for liquid crystal display and its fabrication
First Claim
Patent Images
1. An active matrix substrate, comprising:
- a substrate;
a matrix array of thin film transistors (TFTs) disposed within a display area on said substrate;
a double-layered film including an under-layer of aluminum-neodymium (Al—
Nd) alloy and an over-layer of high melting point metal, said double-layered film forming first interconnection lines for connection to said TFTs; and
a triple-layered film including an under-layer of said high melting point metal, a middle-layer of said Al—
Nd alloy and an over-layer of said high melting point metal, said triple-layered film forming second interconnection lines for connection to said TFTs.
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Abstract
An active matrix substrate comprises a matrix array of TFTs. A double-layered film includes an under-layer of aluminum-neodymium (Al—Nd) alloy and an over-layer of high melting point metal. The double-layered film forms first interconnection lines for connection to the TFTs. A triple-layered film includes an under-layer of said high melting point metal, a middle-layer of said Al—Nd alloy and an over-layer of the high melting point metal. The triple-layered film forms second interconnection lines for connection to the TFTs.
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Citations
45 Claims
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1. An active matrix substrate, comprising:
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a substrate;
a matrix array of thin film transistors (TFTs) disposed within a display area on said substrate;
a double-layered film including an under-layer of aluminum-neodymium (Al—
Nd) alloy and an over-layer of high melting point metal, said double-layered film forming first interconnection lines for connection to said TFTs; and
a triple-layered film including an under-layer of said high melting point metal, a middle-layer of said Al—
Nd alloy and an over-layer of said high melting point metal, said triple-layered film forming second interconnection lines for connection to said TFTs. - View Dependent Claims (2, 3)
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4. A method of fabricating a active matrix substrate including a substrate, a matrix array of thin film transistors (TFTs) disposed within a display area on the substrate, scanning lines for connection to the TFTs, and signal lines for connection to the TFTs, said method comprising:
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forming a double-layered film including an under-layer of aluminum-neodymium (Al—
Nd) alloy and an over-layer of high melting point metal; and
removing portions of said double-layered film to form the scanning lines. - View Dependent Claims (6, 8, 10, 12, 26, 31, 36, 37, 43)
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5. A method of fabricating a active matrix substrate including a substrate, a matrix array of thin film transistors (TFTs) disposed within a display area on the substrate, scanning lines for connection to the TFTs, and signal lines for connection to the TFTs, said method comprising:
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forming a triple-layered film including an under-layer of high melting point metal, a middle-layer of Al—
Nd alloy and an over-layer of said high melting point metal; and
removing portions of said triple-layered film to form the signal lines. - View Dependent Claims (7, 9, 11, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 27, 28, 29, 30, 32, 33, 34, 35, 38, 39, 40, 41, 42, 44, 45)
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Specification