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Power semiconductor devices having laterally extending base shielding regions that inhibit base reach through and methods of forming same

  • US 20020177277A1
  • Filed: 10/19/2001
  • Published: 11/28/2002
  • Est. Priority Date: 04/11/2001
  • Status: Active Grant
First Claim
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1. A vertical power device, comprising:

  • a semiconductor substrate having a drift region of first conductivity type therein;

    an insulated gate electrode that extends on a first surface of said semiconductor substrate;

    a first base shielding region of second conductivity that extends in said semiconductor substrate and has a first lateral extent relative to a first end of said insulated gate electrode;

    a first base region of second conductivity type that extends between said first base shielding region and the first surface and has a second lateral extent relative to the first end of said insulated gate electrode that is less than the first lateral extent;

    a first source region of first conductivity type in said first base region;

    a source electrode electrically connected to said first source region, said first base region and said first base shielding region; and

    a transition region of first conductivity type that extends between the drift region and a portion of the first surface extending opposite said insulated gate electrode, forms rectifying junctions with said first base region and said first base shielding region and has a vertically retrograded first conductivity type doping profile therein.

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