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SONOS flash cells for embedded memory logic, free of drain turn-on and over-erase

  • US 20020179958A1
  • Filed: 09/19/2001
  • Published: 12/05/2002
  • Est. Priority Date: 06/02/2001
  • Status: Abandoned Application
First Claim
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1. A nonvolatile SONOS NOR flash cell, comprising a semiconductor substrate of a first conductivity type;

  • a first silicon dioxide layer formed on the semiconductor substrate;

    a silicon nitride layer formed on the first silicon dioxide;

    a second silicon dioxide layer formed on the silicon nitride layer;

    a gate electrode formed on the second silicon dioxide layer;

    source and drain junctions of a second conductivity type displaced by the gate electrode; and

    a bit line contact hole formed on the drain junction.

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