Semiconductor device

• US 20020180037A1
• Filed: 09/07/2001
• Published: 12/05/2002
• Est. Priority Date: 05/30/2001
• Status: Abandoned Application

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Shirakawa, Shinji, Innami, Toshiyuki, Mishima, Akira, Anan, Hiromichi, Mashino, Keiichi, Ochiai, Yoshitaka
• Application Number:
  US09/947,543
• Publication Number:
  US 20020180037A1
• Time in Patent Office: Days
• US Class Current: 257/727
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

A semiconductor device including a positive polarity wiring plate, negative wiring plate, more than one output wiring plate, semiconductor switch element and conductive buffer or “cushion” member is disclosed. The semiconductor switch element and cushion member are compressively interposed between the output wiring plate and positive wiring plate and also between the output wiring plate and negative wiring plate to thereby constitute bridge circuitry. The positive wiring plate, negative wiring plate or output wiring plate is for use as one support body of a pressurization structure. With such an arrangement, it is possible to improve the heat releasability of semiconductor elements while at the same time reducing the inductance of direct current (DC) circuitry to thereby suppress heat generation of the semiconductor elements, thus increasing the reliability relative to temperature cycles.

Claims

1. A semiconductor device comprising a positive polarity wiring plate, a negative polarity wiring plate, an output wiring plate, a semiconductor switch element, and a conductive buffer material, said semiconductor switch element and said buffer material being compressively interposed between said output wiring plate and positive polarity wiring plate and also between said output wiring plate and negative polarity wiring plate for constitution of bridge circuitry, wherein

any one of said positive polarity wiring plate, said negative polarity wiring plate and said output wiring plate is adapted for use as one support body of a pressurization structure.

5. The semiconductor device as set forth in claim 1 wherein said bridge circuitry includes a half bridge circuit.

10. An electric power conversion apparatus for mutual conversion of a direct current (“

DC”

) voltage and a potentially variable alternate current (AC) voltage with variable frequency, said apparatus comprising the semiconductor device as set forth in claim 1, and a capacitor as connected between said positive polarity wiring plate and said negative polarity wiring plate of said semiconductor device.

15. An electric power conversion apparatus for use in a land vehicle for driving a main electric motor for land vehicle drive, said apparatus comprising the semiconductor device set forth in claim 1.

20. An automotive vehicle comprising the semiconductor device set forth in claim 1, a vehicle-driving electric motor as driven by said semiconductor device.

2. A semiconductor device comprising a positive polarity wiring plate, a negative polarity wiring plate, output wiring plates, more than one semiconductor switch element and a casing containing these components therein with said semiconductor switch element being interposed between said output wiring plate and positive polarity wiring plate and also between said output wiring plate and negative polarity wiring plate to thereby make up bridge circuitry, wherein

said positive polarity wiring plate and negative polarity wiring plate are disposed at a surface opposing a cooling fin assembly of said casing while letting said output wiring plates be disposed at a position opposing said positive polarity wiring plate and a position opposing said negative polarity wiring plate respectively to thereby utilize said positive polarity wiring plate and negative polarity wiring plate as one-side pressurization plates.

6. The semiconductor device as set forth in claim 2 wherein said bridge circuitry includes a half bridge circuit.

11. An electric power conversion apparatus for mutual conversion of a DC voltage and a potentially variable AC voltage with variable frequency, said apparatus comprising the semiconductor device as set forth in claim 2, and a capacitor as connected between said positive polarity wiring plate and said negative polarity wiring plate of said semiconductor device.

16. An electric power conversion apparatus for use in a land vehicle for driving a main electric motor for land vehicle drive, said apparatus comprising the semiconductor device set forth in claim 2.

21. An automotive vehicle comprising the semiconductor device set forth in claim 2, a vehicle-driving electric motor as driven by said semiconductor device.

3. A semiconductor device comprising a positive polarity wiring plate, a negative polarity wiring plate, output wiring plates, more than one semiconductor switch element and a casing containing these components therein with said semiconductor switch element being interposed between said output wiring plate and positive polarity wiring plate and also between said output wiring plate and negative polarity wiring plate to thereby make up bridge circuitry, wherein

said output wiring plates are disposed at a surface opposing a cooling fin assembly of said casing while letting said positive polarity wiring plate and said negative polarity wiring plate be disposed at surfaces opposing said output wiring plates respectively and further letting a conductive plate be disposed opposing said positive polarity wiring plate and said negative polarity wiring plate for permitting utilization of said output wiring plates as one-side pressurization plates.

7. The semiconductor device as set forth in claim 3 wherein said bridge circuitry includes a half bridge circuit.

12. An electric power conversion apparatus for mutual conversion of a DC voltage and a potentially variable AC voltage with variable frequency, said apparatus comprising the semiconductor device as set forth in claim 3, and a capacitor as connected between said positive polarity wiring plate and said negative polarity wiring plate of said semiconductor device.

17. An electric power conversion apparatus for use in a land vehicle for driving a main electric motor for land vehicle drive, said apparatus comprising the semiconductor device set forth in claim 3.

22. An automotive vehicle comprising the semiconductor device set forth in claim 3, a vehicle-driving electric motor as driven by said semiconductor device.

4. A semiconductor device comprising a positive polarity wiring plate, a negative polarity wiring plate, output wiring plates, more than one semiconductor switch element and a casing containing these components therein with said semiconductor switch element being interposed between said output wiring plate and positive polarity wiring plate and also between said output wiring plate and negative polarity wiring plate to thereby make up bridge circuitry, wherein

said output wiring plates and one of the positive and negative polarity wiring plates are disposed at a surface opposing cooling fins of said casing while disposing said one of the positive and negative polarity wiring plates at surface opposing said output wiring plates with an output wiring plate to be connected to said output wiring plates being disposed at a surface opposing said one of the positive and negative wiring plates to thereby utilize as one-side pressurization plates said output wiring plates and said one of the positive and negative wiring plates as disposed at the surface opposing the cooling fins.

8. The semiconductor device as set forth in claim 4 wherein said bridge circuitry includes a half bridge circuit.

13. An electric power conversion apparatus for mutual conversion of a DC voltage and a potentially variable AC voltage with variable frequency, said apparatus comprising the semiconductor device as set forth in claim 4, and a capacitor as connected between said positive polarity wiring plate and said negative polarity wiring plate of said semiconductor device.

18. An electric power conversion apparatus for use in a land vehicle for driving a main electric motor for land vehicle drive, said apparatus comprising the semiconductor device set forth in claim 4.

23. An automotive vehicle comprising the semiconductor device set forth in claim 4, a vehicle-driving electric motor as driven by said semiconductor device.

9. A semiconductor device comprising a positive polarity wiring plate, a negative polarity wiring plate, an output wiring plate disposed between said positive polarity wiring plate and said negative polarity wiring plate, and semiconductor switch elements as disposed between said positive polarity wiring plate and said output wiring plate and between said negative polarity wiring plate and output wiring plate respectively, said positive polarity wiring plate and said negative polarity wiring plate interposing said semiconductor switch elements therebetween for constitution of bridge circuitry, wherein

a conductive block with a heat receiving portion of a heat pipe is disposed between said semiconductor switch elements and the wiring plate.

14. An electric power conversion apparatus for mutual conversion of a DC voltage and a potentially variable AC voltage with variable frequency, said apparatus comprising the semiconductor device as set forth in claim 9, and a capacitor as connected between said positive polarity wiring plate and said negative polarity wiring plate of said semiconductor device.

19. An electric power conversion apparatus for use in a land vehicle for driving a main electric motor for land vehicle drive, said apparatus comprising the semiconductor device set forth in claim 9.

24. An automotive vehicle comprising the semiconductor device set forth in claim 9, a vehicle-driving electric motor as driven by said semiconductor device.