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Method for preparing metal nitride thin films

  • US 20020182320A1
  • Filed: 03/15/2002
  • Published: 12/05/2002
  • Est. Priority Date: 03/16/2001
  • Status: Active Grant
First Claim
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1. A method of growing transition metal nitride thin films in accordance with the principles of the ALD method, according to which method a nitride thin film is grown on a substrate by means of alternate surface reactions of metal and nitrogen source materials, characterized by using as nitrogen source material a compound having a hydrocarbon, amino or silyl group bound to nitrogen, which group, when it dissociates in a homolytic manner from nitrogen, generates a radical which serves as a reducing agent and/or reacts further to generate atomic hydrogen.

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