Quantum well structures and methods of making the same

• US 20020182765A1
• Filed: 08/23/2001
• Published: 12/05/2002
• Est. Priority Date: 11/16/1998
• Status: Abandoned Application

• Current Assignee: Chuong Tran, Robert F. Karlicek Jr
• Original Assignee: Chuong Tran, Robert F. Karlicek Jr
• Inventors: Tran, Chuong, Karlicek, Robert F. Jr.
• Application Number:
  US09/935,890
• Publication Number:
  US 20020182765A1
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

In deposition of a quantum well structure for a light emitting diode, each well layer is formed by a two-phase process. In a first phase, relatively high flux rates of gallium and indium are employed. In the second phase, lower flux rates of gallium and indium are used. The well layer is formed with a composition which varies across the horizontal extent of the layer, and which typically includes clusters of indium-enriched material surrounded by regions of indium-poor material. The resulting structure exhibits enhanced brightness and a narrow, well-defined emission spectrum.

Claims

1. A method of making a quantum well structure for a light-emitting device comprising the steps of:

a) in a first phase, depositing a well layer having average composition according to the formula InyGa1-yN from a first phase gas mixture onto a first barrier layer of the formula InxGa1-xN inclusive of x=0, such that y>

x; and

then

b) in a second phase, holding said well on said base layer at a temperature of about 550-900°

C. in contact with a second phase gas mixture, said gas mixtures and flow rates of said gas mixtures being selected so as to provide an indium flux during the second phase less than the indium flux during the first phase, said second phase being conducted for a time sufficient to cause said well layer to form indium-rich clusters and indium-poor regions distributed over the horizontal extent of the well layer.

2. A method as claimed in claim 1 further comprising the step of depositing a second barrier layer of the formula InxGa1-xN inclusive of x=0 such that y>

x over said well layer after said second phase.

3. A method as claimed in claim 2 further comprising the step of repeating the aforesaid steps in a plurality of cycles, so that the second barrier layer deposited in one cycle serves as the first barrier layer in the next cycle.

4. A method as claimed in claim 1 wherein said second phase gas mixture has a ratio of indium to gallium less than the ratio of indium to gallium in said first phase gas mixture.

5. A method as claimed in claim 1 wherein said well layer undergoes a net loss of indium during said second phase.

6. A method as claimed in claim 4 wherein said first phase gas mixture includes an organogallium compound, an organoindium compound and NH3.

7. A method of making a quantum well structure for a light emitting device comprising the steps of:

a) in a first phase, depositing a well layer having average composition according to the formula InyGa1-yN by passing a first phase gas mixture including as components an organogallium compound, an organoindium compound and NH3 over a first barrier layer of the formula InxGa1-xN inclusive of x=0, such that y>

x while maintaining said first barrier layer at about 550-900°

C., whereby each of said components has a first phase flux during said first phase; and

then

b) in a second phase, maintaining said well layer at about 550-900°

C. in said reactor while passing a second phase gas mixture including said components over said surface so as to provide a second-phase flux of said organoindium compound lower than the first phase flux of said organoindium compound and a second phase flux of said organogallium compound lower than the first phase flux of said organogallium compound.

8. A method as claimed in claim 7 further comprising the step of depositing a second barrier layer of the formula InxGa1-xN inclusive of x=0 such that y>

x over said well layer after said second phase.

9. A method as claimed in claim 8 further comprising the step of repeating the aforesaid steps in a plurality of cycles, so that the second barrier layer deposited in one cycle serves as the first barrier layer in the next cycle.

10. A method as claimed in claim 8 wherein said organoindium and organogallium compounds are lower alkyl indium and gallium compounds.

11. A method as claimed in claim 8 wherein said first phase gas mixture and second phase gas mixture include N_2.

12. A method as claimed in claim 8 wherein said first phase flux of said organoindium compound is about 0.3 to about 0.4 micromoles per cm² per minute;

said first phase flux of said organogallium compound is about 0.4 to about 0.6 micromoles per cm² per minute.

13. A method as claimed in claim 10 wherein said second phase flux of said organoindium compound is about 0.15 to about 0.3 micromoles per cm² per minute and said second phase flux of said organogallium compound is about 0.3 to about 0.4 micromoles per cm² per minute.

14. A method as claimed in claim 8 wherein said first phase is continued for between about 0.05 minutes and about 0.5 minutes and said second phase is continued for about 0.1 minutes to about 1.0 minutes.

15. A method as claimed in claim 8 wherein the ratio of said second phase organoindium flux to said second phase organogallium flux is less than the ratio of said first phase organoindium flux to said first phase organogallium flux.

17. A method as claimed in claim 16 further comprising the step of depositing a second barrier layer as aforesaid over said well layer after said second phase.

18. A method as claimed in claim 17 further comprising the step of repeating the aforesaid steps in a plurality of cycles, so that the second barrier layer deposited in one cycle serves as the first barrier layer in the next cycle.

16. A method of making a quantum well structure for a light-emitting device comprising the steps of:

a) in a first phase, depositing a well layer having average composition according to the formula Al_dIn_eGa_fN_jAs_kP_l, where d+e+f=1;

0≦

d≦

1;

0<

e<

1;

0≦

f≦

1; and

j+k+l=1, from a first phase gas mixture onto a first barrier layer of the formula Al_gIn_hGa_iN_mAs_nP_o, where g+h+i=1;

0≦

g≦

1;

0≦

h≦

1;

0≦

i≦

1; and

m+n+o=1 and e>

h; and

then

b) in a second phase, holding said well on said base layer at a temperature of about 550-900°

C. in contact with a second phase gas mixture, said gas mixtures and flow rates of said gas mixtures being selected so as to provide an indium flux during the second phase less than the indium flux during the first phase, said second phase being conducted for a time sufficient to cause said well layer to form indium-rich clusters and indium-poor regions distributed over the horizontal extent of the well layer.