×

Semiconductor film, semiconductor device and method of their production

  • US 20020182828A1
  • Filed: 05/29/2002
  • Published: 12/05/2002
  • Est. Priority Date: 06/01/2001
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing an amorphous semiconductor film, comprising:

  • introducing a starting gas including silane, a rare gas and hydrogen into a film-forming chamber;

    generating a plasma of said starting gas; and

    forming an amorphous semiconductor film comprising a rare gas element at a concentration of 1×

    1018/cm3 to 1×

    1022cm3 using said plasma.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×