Fuse in semiconductor device and fabricating method thereof

• US 20020182838A1
• Filed: 07/25/2002
• Published: 12/05/2002
• Est. Priority Date: 08/23/1999
• Status: Active Grant

• Current Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Original Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Inventors: Park, Hyun-Suck
• Granted Patent: US 6,613,612 B2
• Time in Patent Office: Days
• US Class Current: 438/601
• CPC Class Codes: H01L 23/5256 comprising fuses, i.e. connections having their state changed from conductive to non-conductive
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The semiconductor device includes a semiconductor substrate, an insulating layer on the semiconductor substrate wherein a groove is patterned to a predetermined depth in an upper surface of the insulating layer, a fuse layer at sidewalls and on a bottom of the groove, and a wire connected electrically to the fuse layer.

Claims

1. A method of fabricating a fuse in semiconductor device comprising the steps of:

forming a device-isolating layer surrounding an active area on a semiconductor substrate of a first conductive type;

forming a MOS transistor having a source and a drain of a second conductive type in the active area;

forming a groove on the device-isolating layer to a predetermined depth;

forming an insulating interlayer on the substrate including the groove wherein the insulating interlayer replicates a pattern of the groove;

depositing barrier metal for a fuse on the insulating interlayer including the replicated groove by sputtering;

depositing Al on the barrier metal;

forming a wire consisting of the Al and barrier metal by patterning the Al and barrier metal; and

forming a fuse layer consisting of the barrier metal by removing the Al of the wire corresponding to the groove.

2. The method of fabricating a fuse in semiconductor device according to claim 1, wherein the device-isolating layer is made of a LOCOS oxide.

3. The method of fabricating a fuse in semiconductor device according to claim 1, wherein the insulating interlayer is made of a BPSG layer.

4. The method of fabricating a fuse in semiconductor device according to claim 1, wherein the predetermined depth amounts to 1500.

5. The method of fabricating a fuse in semiconductor device according to claim 1, wherein the barrier metal consists of Ti and TiN.

6. The method of fabricating a fuse in semiconductor device according to claim 1, wherein the first conductive type is p.

7. The method of fabricating a fuse in semiconductor device according to claim 1, wherein the second conductive type is n.

8. The method of fabricating a fuse in semiconductor device according to claim 1, wherein the barrier metal is formed by the sputtering without using a collimator in a sputtering equipment.