Trench power semiconductor component

• US 20020185680A1
• Filed: 06/10/2002
• Published: 12/12/2002
• Est. Priority Date: 06/08/2001
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Hirler, Franz, Zundel, Markus, Kotek, Manfred, Henninger, Ralf, Larik, Joost
• Granted Patent: US 6,833,584 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench power semiconductor component is described which has an edge cell in which an edge trench is provided. The edge trench, at least on an outer side wall, has a thicker insulating layer than an insulating layer of trenches of the cell array. This simple configuration provides a high dielectric strength and is economical to produce.

Claims

1. A trench power semiconductor component, comprising:

a cell array having a trench formed therein and a first insulating layer lining said trench, said first insulating layer having a first thickness; and

an edge cell surrounding said cell array and having at least one edge trench formed therein with an outer side wall in relationship to said cell array said edge cell having a second insulating layer lining said edge trench and a conductive material at least partially filling said edge trench, said conductive material forming a field plate, said second insulating layer of said edge trench having a second thickness being greater than said first thickness at least on said outer side wall of said edge trench opposite said cell array.

2. The trench power semiconductor component according to claim 1, wherein said cell array has a further conductive material at least partially filling said trench, and said edge cell includes said trench filled with said further conductive material and lined with said first insulating layer having said first thickness being less than said second thickness of said second insulating layer lining said edge trench.

3. The trench power semiconductor component according to claim 1, wherein said edge trench is defined by an inner side wall and said inner side wall at least partially lined by said second insulating layer.

4. The trench power semiconductor component according to claim 3, wherein said inner side wall of the edge trench is entirely covered by said second insulating layer.

5. The trench power semiconductor component according to claim 2, wherein said conductive material and said further conductive material are formed from a polycrystalline silicon.

6. The trench power semiconductor component according to claim 2, further comprising:

a substrate having said cell array and said edge cell formed on and in said substrate, said substrate having a further edge trench formed therein; and

an additional conductive material filling said further edge trench, said additional conductive material and said conductive material formed so as to be coherent.

7. The trench power semiconductor component according to claim 1, wherein said second insulating layer is formed of a material selected from the group consisting of field oxides and thick oxides.

8. The trench power semiconductor component according to claim 1, wherein said first insulating layer is a gate oxide.

9. The trench power semiconductor component according to claim 7, wherein said second insulating layer is at least 20% thicker than said first insulating layer.

10. The trench power semiconductor component according to claim 1, wherein the trench power semiconductor component is a trench power transistor.