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Semiconductor device

  • US 20020185690A1
  • Filed: 06/05/2002
  • Published: 12/12/2002
  • Est. Priority Date: 06/06/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer;

    a first dielectric film provided on said semiconductor layer;

    a first gate electrode provided on said first dielectric film;

    at least one second gate electrode provided opposite said first gate electrode to receive an input signal;

    at least one second dielectric film intervening between said first gate electrode and at least one said second gate electrode;

    a third gate electrode provided opposite said first gate electrode;

    a ferroelectric film intervening between said first gate electrode and said third gate electrode; and

    an output portion connected to a part of said semiconductor layer for outputting an output signal according to the input signal inputted in at least one said second gate electrode, wherein there is provided a learning ability for strengthening or weakening a correlation between said input signal and said output signal according to polarization characteristics of said ferroelectric film.

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