Phosphor-converted light emitting device
First Claim
1. A light source comprising:
- a light emitting device, the light emitting device comprising a stack of semiconductor layers including an n-type region, an active region, and a p-type region; and
a luminescent material structure covering the light emitting device, wherein any variation in a thickness of the luminescent material structure is less than or equal to 10% of an average thickness of the luminescent material structure.
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Abstract
A light source is disclosed that includes a light emitting device such as a III-nitride light emitting diode covered with a luminescent material structure, such as a single layer or multiple layers of phosphor. Any variations in the thickness of the luminescent material structure are less than or equal to 10% of the average thickness of the luminescent material structure. In some embodiments, the thickness of the luminescent material structure is less than 10% of a cross-sectional dimension of the light emitting device. In some embodiments, the luminescent material structure is the only luminescent material through which light emitted from the light emitting device passes. In some embodiments, the luminescent material structure is between about 15 and about 100 microns thick. The luminescent material structure is selectively deposited on the light emitting device by, for example, stenciling or electrophoretic deposition.
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Citations
25 Claims
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1. A light source comprising:
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a light emitting device, the light emitting device comprising a stack of semiconductor layers including an n-type region, an active region, and a p-type region; and
a luminescent material structure covering the light emitting device, wherein any variation in a thickness of the luminescent material structure is less than or equal to 10% of an average thickness of the luminescent material structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification