Method of manufacturing a semiconductor device

• US 20020187594A1
• Filed: 03/28/2002
• Published: 12/12/2002
• Est. Priority Date: 03/29/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyairi, Hidekazu, Nakajima, Setsuo, Yamazaki, Shunpei
• Granted Patent: US 6,855,584 B2
• Time in Patent Office: Days
• US Class Current: 438/166
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm²) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

Claims

1. A method of manufacturing a semiconductor device comprising:

a first step of forming a first semiconductor film comprising an amorphous structure on an insulating film;

a second step of irradiating first laser light to the first semiconductor film after performing heat treatment to form a second semiconductor film comprising a crystalline structure and an oxide film on the second semiconductor film;

a third step of removing the oxide film; and

a fourth step of irradiating second laser light in an inert gas atmosphere or in a vacuum to level a surface of the second semiconductor film.

2. A method of manufacturing a semiconductor device according to claim 1, wherein the energy density of the second laser light is higher than the energy density of the first laser light.

19. A method of manufacturing a semiconductor device according to claim 1, wherein the inert gas atmosphere is a nitrogen atmosphere.

3. A method of manufacturing a semiconductor device comprising:

a first step of forming a first semiconductor film comprising an amorphous structure on an insulating surface;

a second step of adding a metallic element to the first semiconductor film;

a third step of irradiating first laser light to the first semiconductor film after performing heat treatment to form a second semiconductor film comprising a crystalline structure and an oxide film on the second semiconductor film;

a fourth step of performing oxidation of a surface of the second semiconductor film by using a solution comprising ozone;

a fifth step of forming a third semiconductor film comprising an inert gas element over the oxide film;

a sixth step of gettering the metallic element into the third semiconductor film to reduce the concentration of the metallic element in the second semiconductor film;

a seventh step of removing the third semiconductor film;

an eighth step of removing the oxide film; and

a ninth step of irradiating second laser light in an inert gas atmosphere or in a vacuum to level a surface of the second semiconductor film.

4. A method of manufacturing a semiconductor device according to claim 3, wherein the sixth step is performed with thermal treatment.

5. A method of manufacturing a semiconductor device according to claim 3, wherein the sixth step is performed by irradiating strong light to the second semiconductor film.

6. A method of manufacturing a semiconductor device according to claim 3, wherein thermal treatment is performed and irradiation of strong light to the second semiconductor film is performed in the sixth step.

7. A method of manufacturing a semiconductor device according to claim 5, wherein the strong light is light emitted from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp.

8. A method of manufacturing a semiconductor device according to claim 6, wherein the strong light is light emitted from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp.

9. A method of manufacturing a semiconductor device according to claim 3, wherein the energy density of the first laser light is higher than the energy density of the second laser light.

20. A method of manufacturing a semiconductor device according to claim 3, wherein the inert gas atmosphere is a nitrogen atmosphere.

22. A method of manufacturing a semiconductor device according to claim 3, wherein the heat treatment in the third step is thermal treatment or irradiation of strong light.

24. A method of manufacturing a semiconductor device according to claim 3, wherein the third semiconductor film is formed by sputtering with semiconductor as a target in an atmosphere containing an inert gas element.

26. A method of manufacturing a semiconductor device according to claim 3, wherein the third semiconductor film is formed by sputtering with semiconductor containing phosphorous or boron as a target in an atmosphere containing an inert gas.

28. A method of manufacturing a semiconductor device according to claim 3, wherein the metallic element is an element, or a plurality of elements, selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

30. A method of manufacturing a semiconductor device according to claim 3, wherein the inert gas element is an element, or a plurality of elements, selected from the group consisting of He, Ne, Ar, Kr, and Xe.

10. A method of manufacturing a semiconductor device comprising:

a first step of forming a first semiconductor film comprising an amorphous structure on an insulating surface;

a second step of adding a metallic element to the first semiconductor film;

a third step of irradiating first laser light to the first semiconductor film after performing heat treatment to form a second semiconductor film comprising a crystalline structure and an oxide film on the second semiconductor film,

a fourth step of removing the oxide film;

a fifth step of irradiating second laser light in an inert gas atmosphere or in a vacuum to level a surface of the second semiconductor film;

a sixth step of forming a barrier layer on the surface of the second semiconductor film;

a seventh step of forming a third semiconductor film comprising an inert gas element on the barrier layer;

an eighth step of gettering the metallic element into the third semiconductor film, thus to reduce the concentration of the metallic element in the second semiconductor film; and

a ninth step of removing the third semiconductor film.

11. A method of manufacturing a semiconductor device according to claim 10, wherein the barrier layer is formed by oxidizing the surface of the second semiconductor film by using a solution comprising ozone.

12. A method of manufacturing a semiconductor device according to claim 10, wherein the barrier layer is formed by oxidizing the surface of the second semiconductor film by irradiating ultraviolet rays,.

13. A method of manufacturing a semiconductor device according to claim 10. wherein the barrier layer is formed by oxidizing the surface of the second semiconductor film by using a solution comprising ozone after oxidizing the surface of the second semiconductor film by irradiating laser light.

14. A method of manufacturing a semiconductor device according to claim 10, wherein the eighth step is performed with thermal treatment.

15. A method of manufacturing a semiconductor device according to claim 10, wherein the eighth step is performed by irradiating strong light to the second semiconductor film.

16. A method of manufacturing a semiconductor device according to claim 10, wherein thermal treatment is performed and irradiation of strong light to the second semiconductor film is performed in the eighth step.

17. A method of manufacturing a semiconductor device according to claim 15, wherein the strong light is light emitted from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp.

18. A method of manufacturing a semiconductor device according to claim 16, wherein the strong light is light emitted from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp.

21. A method of manufacturing a semiconductor device according to claim 10, wherein the inert gas atmosphere is a nitrogen atmosphere.

23. A method of manufacturing a semiconductor device according to claim 10, wherein the heat treatment in the third step is thermal treatment or irradiation of strong light.

25. A method of manufacturing a semiconductor device according to claim 10, wherein the third semiconductor film is formed by sputtering with semiconductor as a target in an atmosphere containing an inert gas element.

27. A method of manufacturing a semiconductor device according to claim 10, wherein the third semiconductor film is formed by sputtering with semiconductor containing phosphorous or boron as a target in an atmosphere containing an inert gas.

29. A method of manufacturing a semiconductor device according to claim 10, wherein the metallic element is an element, or a plurality of elements, selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

31. A method of manufacturing a semiconductor device according to claim 10, wherein the inert gas element is an element, or a plurality of elements, selected from the group consisting of He, Ne, Ar, Kr, and Xe.

32. A method of manufacturing a semiconductor device, comprising:

a first step of forming a first semiconductor film comprising an amorphous structure on an insulating surface;

a second step of adding a metallic element to the first semiconductor film;

a third step of irradiating first laser light to the first semiconductor film after performing heat treatment to form a second semiconductor film comprising a crystalline structure and an oxide film on the second semiconductor film;

a fourth step of leveling a surface of the second semiconductor film; and

a fifth step of gettering the metallic element to reduce the concentration of the metallic element in the second semiconductor film.

33. A method of manufacturing a semiconductor device according to claim 32, wherein the fourth step is a step of removing the oxide film, and then irradiating second laser light with a higher energy density than that of the first laser light to level the surface of the second semiconductor film.