Structure and method for fabricating semiconductor structures and devices for detecting smoke
First Claim
1. A semiconductor structure for detecting smoke comprising:
- a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
an optical source component overlying the monocrystalline compound semiconductor material, the optical source component being operable to generate a radiant energy transmission; and
an optical detector component overlying the monocrystalline compound semiconductor material, the optical detector component being operable to generate a detection signal in response to receipt of a reflection of the radiant energy transmission off of smoke particles.
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Accused Products
Abstract
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
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Citations
30 Claims
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1. A semiconductor structure for detecting smoke comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
an optical source component overlying the monocrystalline compound semiconductor material, the optical source component being operable to generate a radiant energy transmission; and
an optical detector component overlying the monocrystalline compound semiconductor material, the optical detector component being operable to generate a detection signal in response to receipt of a reflection of the radiant energy transmission off of smoke particles. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 28, 29, 30)
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15. A process for fabricating a semiconductor structure for detecting smoke comprising:
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providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystallie perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film;
forming an optical source component overlying the monocrystalline compound semiconductor layer, the optical source component being operable to generate a radiant energy transmission; and
forming an optical detector component overlying the monocrystalline compound semiconductor layer, the optical detector component being operable to generate a detection signal in response to receipt of a reflection of the radiant energy transmission off of smoke particles.
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27. A method for detecting smoke comprising:
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providing a monocrystalline silicon substrate;
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film;
generating a radiant energy transmission;
receiving a reflection of the radiant energy transmission off of smoke particles; and
generating a detection signal in response to receipt of the reflection of the radiant energy transmission.
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Specification