Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
First Claim
1. A light emitting diode comprising:
- a light emitting region capable of emitting radiation; and
a reflector reflective of the radiation and separated from the light emitting region by a separation, wherein the separation is such that interferences between direct and reflected beams of the emitted radiation cause radiation to concentrate in a top escape cone of the light emitting device.
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Accused Products
Abstract
In accordance with embodiments of the invention, a light emitting device includes a light emitting region and a reflective contact separated from the light emitting region by one or more layers. In a first embodiment, the separation between the light emitting region and the reflective contact is between about 0.5λn and about 0.9λn, where λn is the wavelength of radiation emitted from the light emitting region in an area of the device separating the light emitting region and the reflective contact. In a second embodiment, the separation between the light emitting region and the reflective contact is between about λn and about 1.4λn. The light emitting region may be, for example, III-nitride, III-phosphide, or any other suitable material.
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Citations
52 Claims
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1. A light emitting diode comprising:
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a light emitting region capable of emitting radiation; and
a reflector reflective of the radiation and separated from the light emitting region by a separation, wherein the separation is such that interferences between direct and reflected beams of the emitted radiation cause radiation to concentrate in a top escape cone of the light emitting device. - View Dependent Claims (2)
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3. A light emitting diode comprising:
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a light emitting region capable of emitting radiation; and
a reflector reflective of the radiation;
wherein the reflector is separated from the light emitting region by a separation ranging between about 0.5λ
and about 0.9λ
n, wherein λ
n is the wavelength of the radiation within a region separating the light emitting region from the reflector. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A light emitting diode comprising:
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a light emitting region capable of emitting radiation; and
a reflector reflective of the radiation;
wherein the reflector is separated from the light emitting region by a separation ranging between about λ
n and about 1.4λ
n, wherein λ
n is the wavelength of the radiation within a region separating the light emitting region from the reflector. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A light emitting diode comprising:
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a light emitting region capable of emitting radiation; and
a reflector reflective of the radiation;
wherein the reflector is separated from the light emitting region by a separation ranging between about 1.55λ
n and about 1.95λ
n, wherein λ
n is the wavelength of the radiation within a region separating the light emitting region from the reflector. - View Dependent Claims (33, 34, 35, 37, 39, 40, 41, 42, 43, 44, 46, 47, 48, 49, 50, 51)
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36. A method of creating a light emitting diode, the method comprising:
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selecting a material for a light emitting region capable of emitting radiation;
selecting a material for a reflector reflective of the radiation;
calculating a top escape cone of the light emitting diode;
determining a phase shift of the radiation when reflected off the reflector;
calculating a radiation pattern for at least one distance using the phase shift;
plotting extraction efficiency as a function of distance using the at least one radiation pattern; and
determining a separation distance corresponding a maximum in the plot of extraction efficiency as a function of distance.
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38. A method of extracting light from the topside of a light emitting diode, the method comprising:
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providing a light emitting region capable of emitting radiation; and
providing a reflector reflective of the radiation and separated from the light emitting region by a separation ranging between about 0.5λ
n and about 0.9λ
n, wherein λ
n is the wavelength of the radiation emitted by the light emitting region within the region separating the light emitting region from the reflector.
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45. A method of extracting light from the topside of a light emitting diode, the method comprising:
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providing a light emitting region capable of emitting radiation; and
providing a reflector reflective of the radiation and separated from the light emitting region by a separation ranging between about λ
n and about 1.4λ
n, wherein λ
n;
is the wavelength of the radiation emitted by the light emitting region within the region separating the light emitting region from the reflector.
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52. A light emitting diode comprising:
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a light emitting region capable of emitting radiation; and
a reflector reflective of the radiation, the reflector comprising one of gold and gold alloy;
wherein the reflector is separated from the light emitting region by a separation ranging between about 2.12λ
n and about 2.3λ
n, wherein λ
n is the wavelength of the radiation within a region separating the light emitting region from the reflector.
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Specification