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Methods for manufacturing semiconductor devices and semiconductor devices

  • US 20020190314A1
  • Filed: 06/19/2001
  • Published: 12/19/2002
  • Est. Priority Date: 06/19/2000
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:

  • (a) forming a gate dielectric layer over a semiconductor substrate;

    (b) forming a gate electrode over the gate dielectric layer;

    (c) forming an extension control layer over the semiconductor substrate on sides of the gate dielectric layer; and

    (d) forming a first impurity layer and a second impurity layer by ion-implanting an impurity in the semiconductor substrate, wherein an extension region is formed in the semiconductor substrate below the extension control layer during the ion-implanting used to form the first impurity layer and the second impurity layer.

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