Semiconductor device with borderless contact structure and method of manufacturing the same
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate comprising an active area and a field area, the active and field areas being divided by a field oxide layer;
a plurality of gate electrodes formed on the active area of the semiconductor substrate;
an etch-protecting layer formed on the gate electrodes and the semiconductor substrate;
an etch-stopping layer stacked on the etch-protecting layer; and
an insulating interlayer formed on the etch-stopping layer comprising a first contact hole passing through the etch-protecting layer and the etch-stopping layer to expose a surface of the semiconductor substrate formed between gate electrodes and a second contact hole passing through the etch-protecting layer and the etch-stopping layer to expose a surface of the semiconductor substrate adjacent to the field oxide layer and a portion of a surface of the field oxide layer, thereby forming a borderless contact between the active area and the field area;
wherein the etch-protecting layer and the etch-stopping layer protect the gate electrodes and the semiconductor substrate during an etching process of forming the first and second contact holes such that an enlarged width between the gate electrodes is obtained without forming spacers between the gate electrodes.
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Accused Products
Abstract
A semiconductor device comprising a borderless contract structure and a method of manufacturing the same. An etch-protecting layer is formed on a semiconductor substrate having gate electrodes formed on an active area of the substrate. Spacers are formed on the etch-protecting layer, and removed after performing a source/drain ion-implantation process to secure a region for forming a contact hole between the gate electrodes. After sequentially forming an etch-stopping layer and an insulating interlayer on a resultant structure, the etch-stopping layer and the insulating interlayer are etched to form the first contact hole which exposes a surface of the semiconductor substrate between gate electrodes and a second contact hole for the borderless contact which exposes the surface of the semiconductor substrate adjacent to the field oxide layer and a portion of a surface of the field oxide layer.
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Citations
27 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate comprising an active area and a field area, the active and field areas being divided by a field oxide layer;
a plurality of gate electrodes formed on the active area of the semiconductor substrate;
an etch-protecting layer formed on the gate electrodes and the semiconductor substrate;
an etch-stopping layer stacked on the etch-protecting layer; and
an insulating interlayer formed on the etch-stopping layer comprising a first contact hole passing through the etch-protecting layer and the etch-stopping layer to expose a surface of the semiconductor substrate formed between gate electrodes and a second contact hole passing through the etch-protecting layer and the etch-stopping layer to expose a surface of the semiconductor substrate adjacent to the field oxide layer and a portion of a surface of the field oxide layer, thereby forming a borderless contact between the active area and the field area;
wherein the etch-protecting layer and the etch-stopping layer protect the gate electrodes and the semiconductor substrate during an etching process of forming the first and second contact holes such that an enlarged width between the gate electrodes is obtained without forming spacers between the gate electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for forming a contact hole of a semiconductor device, the method comprising the steps of:
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forming a plurality of gate electrodes on an active area of a semiconductor substrate, the semiconductor substrate comprising the active area and a field area divided by a field oxide layer;
forming an etch-protecting layer on the gate electrodes and the semiconductor substrate;
forming spacers on the etch-protecting layer formed on both sides of each gate electrode, the spacers comprising a material having an etch selectivity with respect to the etch-protecting layer;
performing a source and drain ion-implantation process by using the gate electrodes on which the spares are formed as a mask;
removing the spacers;
forming an etch-stopping layer on the entire surface of the resultant structure;
forming an insulating interlayer on the etch-stopping layer; and
sequentially etching the insulating interlayer, the etch-stopping layer and the etch-protecting layer such that a first contact hole is formed to expose a surface of the semiconductor substrate between the gate electrodes and a second contact hole is formed to expose a surface of the semiconductor substrate adjacent to the field oxide layer and a portion of a surface of the field oxide layer, thereby forming a borderless contact between the field area and the active area. - View Dependent Claims (12, 13, 14, 15, 16, 17, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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18. A method for forming a contact hole of a semiconductor device, the method comprising the steps of:
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forming a plurality of gate electrodes on an active area of a semiconductor substrate, the semiconductor substrate comprising the active area and a field area divided by a field oxide layer;
forming an etch-protecting layer on the gate electrodes and the semiconductor substrate;
forming spacers on the etch-protecting layer formed on both sides of each gate electrode, the spacers comprising a material having an etch selectivity with respect to the etch-protecting layer;
performing a source and drain ion-implantation process by using the gate electrodes on which the spares are formed as a mask;
removing the spacers;
forming an etch-stopping layer on the entire surface of the resultant structure, wherein the etch-stopping layer comprising a material similar to a material of the etch-protecting layer;
forming an insulating interlayer on the etch-stopping layer; and
sequentially etching the insulating interlayer, the etch-stopping layer and the etch-protecting layer, such that a first contact hole is formed to expose a surface of the semiconductor substrate between the gate electrodes and a second contact hole is formed to expose a surface of the semiconductor substrate adjacent to the field oxide layer and a portion of a surface of the field oxide layer, thereby forming a borderless contact between the field area and the active area.
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Specification