Light emission apparatus and method of fabricating the same
First Claim
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1. A light emission apparatus comprising:
- an electrode;
a light emitting device mounted on said electrode with an indium layer posed therebetween, said light emitting device having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal relating ZnSe serving as a matrix thereof, said epitaxial light emission structure being provided on said substrate and emitting light when an electric current is introduced thereinto; and
resin encapsulating said light emitting device, said resin having a glass transition temperature of lower than 80 degrees centigrade.
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Abstract
A light emission apparatus includes: an electrode; a LED mounted on the electrode with an indium layer posed therebetween, the LED having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal relating ZnSe serving as a matrix, the epitaxial light emission structure being provided on the substrate and emitting light when an electric current is introduced thereinto; and resin encapsulating the LED, the resin having a glass transition temperature of lower than 80 degrees centigrade or being soft to be still elastic in a vicinity of the LED at room temperature.
25 Citations
10 Claims
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1. A light emission apparatus comprising:
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an electrode;
a light emitting device mounted on said electrode with an indium layer posed therebetween, said light emitting device having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal relating ZnSe serving as a matrix thereof, said epitaxial light emission structure being provided on said substrate and emitting light when an electric current is introduced thereinto; and
resin encapsulating said light emitting device, said resin having a glass transition temperature of lower than 80 degrees centigrade. - View Dependent Claims (2, 3, 4)
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5. A light emission apparatus comprising:
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an electrode;
a light emitting device mounted on said electrode with an indium layer posed therebetween, said light emitting device having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal relating ZnSe serving as a matrix thereof, said epitaxial light emission structure being provided on said substrate and emitting light when an electric current is introduced thereinto; and
resin encapsulating said light emitting device, said resin including a first resin transparent or having a light diffusing agent mixed therein, and covering said light emitting device, and a second resin transparent or having a light diffusing agent mixed therein, and covering said first resin, said first resin having an elasticity corresponding to an elongation of no less than 40% at room temperature, said second resin being grater in hardness than said first resin. - View Dependent Claims (6, 7, 8)
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9. A method of fabricating a light emission apparatus, comprising the steps of:
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mounting a light emitting device on an electrode with an indium layer posed therebetween, said light emitting device having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal relating ZnSe serving as a matrix thereof, said epitaxial light emission structure being provided on said substrate and emitting light when an electric current is introduced thereinto; and
dropping epoxy resin on said light emitting device and then curing said epoxy resin to encapsulate said light emitting device with said epoxy resin, said epoxy resin having a glass transition temperature of lower than 80 degrees centigrade.
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10. A method of fabricating a light emission apparatus, comprising the steps of:
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mounting a light emitting device on an electrode with an indium layer posed therebetween, said light emitting device having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal relating ZnSe serving as a matrix thereof, said epitaxial light emission structure being provided on said substrate and emitting light when an electric current is introduced thereinto;
covering said light emitting device with silicone resin; and
transfer-molding epoxy resin to cover said silicone resin therewith.
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Specification