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Method for fabricating semiconductor device

  • US 20020192915A1
  • Filed: 05/22/2002
  • Published: 12/19/2002
  • Est. Priority Date: 05/23/2001
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device having a MIS transistor provided with a gate insulating film on a semiconductor substrate and a gate electrode on the gate insulating film, the method including the steps of:

  • (a) forming, on the sides of the gate electrode, sidewalls including a first oxide film and a second oxide film which have different etching properties;

    (b) implanting ions for forming source and drain regions using the sidewalls as a mask; and

    (c) selectively removing the second oxide film by etching the sidewalls with a mixed solution containing hydrofluoric acid and an organic solution.

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