Composition compatible with aluminum planarization and methods therefore
First Claim
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1. A planarization method comprising:
- positioning an aluminum-containing surface of a wafer surface to interface with a fixed abrasive article;
supplying an aluminum CMP composition in proximity to the interface; and
planarizing the wafer surface using the fixed abrasive and the aluminum CMP composition, the aluminum CMP composition comprising a surfactant, a complexant, and an oxidant, wherein the composition has a pH less than about 10.
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Abstract
A planarization method includes providing an aluminum-containing surface and positioning it for contact with a fixed abrasive article in the presence of a composition preferably including a surfactant, a complexant, and an oxidant, wherein the solution has a pH of less than about 10.
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Citations
130 Claims
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1. A planarization method comprising:
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positioning an aluminum-containing surface of a wafer surface to interface with a fixed abrasive article;
supplying an aluminum CMP composition in proximity to the interface; and
planarizing the wafer surface using the fixed abrasive and the aluminum CMP composition, the aluminum CMP composition comprising a surfactant, a complexant, and an oxidant, wherein the composition has a pH less than about 10. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A planarization method for use in forming an interconnect:
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providing a wafer having a patterned dielectric layer formed thereon and an aluminum-containing layer formed over the patterned dielectric layer;
positioning a first portion of a fixed abrasive for contact with the aluminum-containing layer;
providing a composition in proximity to the contact between the fixed abrasive and the metal layer, wherein the composition comprises a surfactant, a complexant, and about 0.5% to about 15% by volume of an oxidant, wherein the composition has a pH less than about 10; and
planarizing the aluminum-containing layer using the fixed abrasive and the composition. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A planarization method comprising:
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providing a substrate assembly including at least one region of a aluminum-containing metal;
providing a fixed abrasive;
providing a composition at an interface between the at least one region of aluminum-containing metal and the fixed abrasive, wherein the composition comprises a surfactant, a complexant, and an oxidant, wherein the composition has a pH less than about 10; and
planarizing the at least one region of aluminum-containing metal using the fixed abrasive and the composition. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 60)
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59. A composition consisting essentially of a surfactant in an amount of about 1% to about 10% by volume;
- a complexant in an amount of about 1% to about 10% by volume; and
an oxidant in an amount of about 0.5% to about 15% by volume, wherein the composition has a pH of about 1 to about 10 and is effective to planarize an aluminum-containing surface in the presence of a fixed abrasive.
- a complexant in an amount of about 1% to about 10% by volume; and
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61. A planarization method comprising:
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positioning an aluminum-containing surface of a wafer surface to interface with a fixed abrasive article;
supplying a planarization composition for use with the aluminum-containing surface in proximity to the interface; and
planarizing the wafer surface using the fixed abrasive article and the planarization composition, the planarization composition comprising a surfactant, a complexant, and an oxidant, wherein the planarization composition has a pH less than about 10. - View Dependent Claims (62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79)
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80. A planarization method for use in forming an interconnect:
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providing a wafer having a patterned dielectric layer formed thereon and an aluminum-containing layer formed over the patterned dielectric layer;
positioning a first portion of a fixed abrasive for contact with the aluminum-containing layer;
providing a planarization composition for use with the aluminum-containing layer in proximity to the contact between the fixed abrasive and the metal layer, wherein the planarization composition comprises a surfactant, a complexant, and about 0.5% to about 10% by volume of an oxidant, wherein the planarization composition has a pH less than about 10; and
planarizing the aluminum-containing layer using the fixed abrasive and the planarization composition. - View Dependent Claims (81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98)
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99. A planarization method comprising:
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providing a substrate assembly including at least one region of a aluminum-containing metal;
providing a fixed abrasive;
providing a planarization composition for use with the aluminum-containing surface at an interface between the at least one region of aluminum-containing metal and the fixed abrasive, wherein the planarization composition comprises a surfactant, a complexant, and an oxidant, wherein the planarization composition has a pH less than about 10; and
planarizing the at least one region of aluminum-containing metal using the fixed abrasive and the planarization composition. - View Dependent Claims (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130)
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119. A planarization method comprising:
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providing an aluminum-containing surface of a wafer surface to interface with a fixed abrasive article;
providing a planarization composition for use with the aluminum-containing surface in proximity to the interface; and
planarizing the wafer surface using the fixed abrasive article and the planarization composition, wherein planarizing the wafer surface comprises planarizing the wafer surface at a temperature of about 24°
C. or less, wherein the planarization composition comprises a surfactant, a complexant, and an oxidant, and further wherein the planarization composition has a pH less than about 10.
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Specification