Semiconductor device and method of manufacturing the same

• US 20020192946A1
• Filed: 07/03/2002
• Published: 12/19/2002
• Est. Priority Date: 03/23/1999
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Wada, Junichi, Katata, Tomio, Oikawa, Yasushi
• Granted Patent: US 6,768,202 B2
• Time in Patent Office: Days
• US Class Current: 438/637
• CPC Class Codes: H01L 21/76882 Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53233 Copper alloys
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Disclosed is a semiconductor device comprising a semiconductor substrate, an interlayer insulating film formed on one main surface of the semiconductor substrate and having a concave portion, a liner film formed on the inner surface of the concave portion, a wiring layer formed inside the concave portion with the liner film interposed therebetween, and an agglomeration suppressing material contained in the wiring layer for suppressing agglomeration of the material constituting the wiring layer. The agglomeration suppressing material is selected from the group consisting of O, N, Nb, Ta, Ti, W and C.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate;

an interlayer insulating film formed on one main surface of said semiconductor substrate and having a concave portion;

a liner film formed on the inner surface of said concave portion;

a wiring layer formed inside the concave portion with said liner film interposed therebetween; and

an agglomeration suppressing material contained in said wiring layer for suppressing agglomeration of the material constituting the wiring layer.

2. The semiconductor device according to claim 1, wherein said agglomeration suppressing material is selected from the group consisting of O, N, Nb, Ta, Ti, W and C.

3. The semiconductor device according to claim 1, wherein said liner film is of a single layer structure or a laminate structure made of a material selected from the group consisting of Nb, Ti, NbN and TiN.

4. The semiconductor device according to claim 1, wherein said wiring layer is made of a metal selected from the group consisting of Al, Cu, an Al alloy, and a Cu alloy.

5. The semiconductor device according to claim 1, wherein said concave portion is selected from the group consisting of a wiring groove, a connection hole, and a combination of a connection hole and a wiring groove communicating with said connection hole.

6. A semiconductor device, comprising:

a semiconductor substrate;

an interlayer insulating film formed on one main surface of said semiconductor substrate and having a concave portion;

a liner film formed on the inner surface of said concave portion;

a wiring layer formed inside the concave portion with said liner film interposed therebetween;

an agglomeration suppressing material contained in said wiring layer for suppressing agglomeration of the material constituting the wiring layer; and

a layer of reaction product between the material constituting the liner film and the material constituting the wiring layer, said reaction product layer being formed at any one of the interface between said liner film and said wiring layer and the interface between said interlayer insulating film and said wiring layer.

7. The semiconductor device according to claim 6, wherein said agglomeration suppressing material is selected from the group consisting of O, N, Nb, Ta, Ti, W and C.

8. The semiconductor device according to claim 6, wherein said liner film is of a single layer structure or a laminate structure made of a material selected from the group consisting of Nb, Ti, NbN and TiN.

9. The semiconductor device according to claim 6, wherein said wiring layer is made of a metal selected from the group consisting of Al, Cu, an Al alloy, and a Cu alloy.

10. The semiconductor device according to claim 6, wherein said concave portion is selected from the group consisting of a wiring groove, a connection hole, and a combination of a connection hole and a wiring groove communicating with said connection hole.

11. The semiconductor device according to claim 7, wherein said reaction product layer is formed discontinuous.

13. The method of manufacturing a semiconductor device according to claim 12, wherein said agglomeration suppressing material is adsorbed on the surface of said first conductive film after formation of said first conductive film.

14. The method of manufacturing a semiconductor device according to claim 12, wherein said agglomeration suppressing material is introduced into said first conductive film during formation of said first conductive film.

15. The method of manufacturing a semiconductor device according to claim 12, wherein said first conductive film is formed by shaping a conductive material containing said agglomeration suppressing material into a film.

16. The method of manufacturing a semiconductor device according to claim 12, wherein said agglomeration suppressing material is selected from the group consisting of O, N, Nb, Ta, Ti, W and C.

17. The method of manufacturing a semiconductor device according to claim 12, wherein said liner film is a single layer structure or a laminate structure and made of a material selected from the group consisting of Nb, Ti, NbN and TiN.

18. The method of manufacturing a semiconductor device according to claim 12, wherein said conductive film is formed of a metal selected from the group consisting of Al, Cu, an Al alloy and a Cu alloy.

19. The method of manufacturing a semiconductor device according to claim 12, wherein said concave portion is selected from the group consisting of a wiring groove, a connection hole and a combination of a connection hole and a wiring groove communicating with said connection hole.

12. A method of manufacturing a semiconductor device, comprising the steps of:

forming an interlayer insulating film having a concave portion on a semiconductor substrate;

forming a liner film on the inner surface of said concave portion;

forming a first conductive film within the concave portion, said first conductive film containing an agglomeration suppressing material for suppressing agglomeration of said first conductive film; and

forming a second conductive film within the concave portion while heating said semiconductor substrate and permitting reflow of said first and second conductive films to fill the concave portion with these conductive films.

20. A method of manufacturing a semiconductor device, comprising the steps of:

forming an interlayer insulating film having a concave portion on a semiconductor substrate;

forming a liner film on the inner surface of said concave portion;

forming a first conductive film that does not contain impurities within the concave portion; and

forming a second conductive film containing an impurity within said concave portion while heating the semiconductor substrate and permitting reflow of said first and second conductive films to fill the concave portion with the conductive films.

21. The method of manufacturing a semiconductor device according to claim 20, wherein said first and second conductive films is made of Al and said impurity is Cu.

22. The method of manufacturing a semiconductor device according to claim 20, wherein said liner film is a single layer structure or laminate structure and made of a material selected from the group consisting of Nb, Ti, NbN and TiN.

23. The method of manufacturing a semiconductor device according to claim 20, wherein said concave portion is selected from the group consisting of a wiring groove, a connection hole and a combination of a connection hole and a wiring groove communicating with said connection hole.