Semiconductor device and method of manufacturing the same
First Claim
Patent Images
1. A semiconductor device, comprising:
- a semiconductor substrate;
an interlayer insulating film formed on one main surface of said semiconductor substrate and having a concave portion;
a liner film formed on the inner surface of said concave portion;
a wiring layer formed inside the concave portion with said liner film interposed therebetween; and
an agglomeration suppressing material contained in said wiring layer for suppressing agglomeration of the material constituting the wiring layer.
0 Assignments
0 Petitions
Accused Products
Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, an interlayer insulating film formed on one main surface of the semiconductor substrate and having a concave portion, a liner film formed on the inner surface of the concave portion, a wiring layer formed inside the concave portion with the liner film interposed therebetween, and an agglomeration suppressing material contained in the wiring layer for suppressing agglomeration of the material constituting the wiring layer. The agglomeration suppressing material is selected from the group consisting of O, N, Nb, Ta, Ti, W and C.
-
Citations
23 Claims
-
1. A semiconductor device, comprising:
-
a semiconductor substrate;
an interlayer insulating film formed on one main surface of said semiconductor substrate and having a concave portion;
a liner film formed on the inner surface of said concave portion;
a wiring layer formed inside the concave portion with said liner film interposed therebetween; and
an agglomeration suppressing material contained in said wiring layer for suppressing agglomeration of the material constituting the wiring layer. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor device, comprising:
-
a semiconductor substrate;
an interlayer insulating film formed on one main surface of said semiconductor substrate and having a concave portion;
a liner film formed on the inner surface of said concave portion;
a wiring layer formed inside the concave portion with said liner film interposed therebetween;
an agglomeration suppressing material contained in said wiring layer for suppressing agglomeration of the material constituting the wiring layer; and
a layer of reaction product between the material constituting the liner film and the material constituting the wiring layer, said reaction product layer being formed at any one of the interface between said liner film and said wiring layer and the interface between said interlayer insulating film and said wiring layer. - View Dependent Claims (7, 8, 9, 10, 11, 13, 14, 15, 16, 17, 18, 19)
-
-
12. A method of manufacturing a semiconductor device, comprising the steps of:
-
forming an interlayer insulating film having a concave portion on a semiconductor substrate;
forming a liner film on the inner surface of said concave portion;
forming a first conductive film within the concave portion, said first conductive film containing an agglomeration suppressing material for suppressing agglomeration of said first conductive film; and
forming a second conductive film within the concave portion while heating said semiconductor substrate and permitting reflow of said first and second conductive films to fill the concave portion with these conductive films.
-
-
20. A method of manufacturing a semiconductor device, comprising the steps of:
-
forming an interlayer insulating film having a concave portion on a semiconductor substrate;
forming a liner film on the inner surface of said concave portion;
forming a first conductive film that does not contain impurities within the concave portion; and
forming a second conductive film containing an impurity within said concave portion while heating the semiconductor substrate and permitting reflow of said first and second conductive films to fill the concave portion with the conductive films. - View Dependent Claims (21, 22, 23)
-
Specification