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Method for vapor phase etching of silicon

  • US 20020195423A1
  • Filed: 03/22/2002
  • Published: 12/26/2002
  • Est. Priority Date: 10/26/1999
  • Status: Active Grant
First Claim
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1. A method for etching a sample comprising a silicon material, comprising providing a vapor phase etchant to the silicon material and etching the silicon material where a total gas pressure proximate to the silicon material is greater than 10 Torr.

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