Organic polarizable gate transistor apparatus and method
First Claim
1. An apparatus, comprising:
- a field effect transistor having a gate, the gate including a dielectric layer, wherein at least a portion of the dielectric layer is an organic dielectric, and a gate contact; and
a circuit having an output coupled to the gate contact, the circuit is configured to produce one or more storage voltage pulses that cause charge to be stored in the gate.
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Accused Products
Abstract
An apparatus having a circuit coupled to the gate contact of a field effect transistor wherein the transistor'"'"'s gate includes a dielectric layer of which at least a portion is an organic dielectric. The circuit is configured to produce one or more storage voltage pulses that cause charge to be stored in the gate. The field effect transistor has a semiconductor layer with a conductive path whose conductivity changes for a given Vg in response to storing the charge. The circuit may produce one or more dissipation voltage pulses having a voltage of opposite sign to the one or more storage pulses, that cause dissipation of charge stored in the gate. Further disclosed are a memory and a method of electronically storing and reading information, both utilizing the organic-based polarizable gate transistor apparatus.
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Citations
32 Claims
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1. An apparatus, comprising:
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a field effect transistor having a gate, the gate including a dielectric layer, wherein at least a portion of the dielectric layer is an organic dielectric, and a gate contact; and
a circuit having an output coupled to the gate contact, the circuit is configured to produce one or more storage voltage pulses that cause charge to be stored in the gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 24, 25, 26, 27, 28, 29)
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23. A method of electronically storing and reading information utilizing:
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a field effect transistor having a gate, the gate including a dielectric layer, wherein at least a portion of the dielectric layer is an organic dielectric, and a gate contact; and
a circuit having an output coupled to the gate contact;
the steps of the method comprising;
storing charge in the gate by the circuit supplying one or more storage voltage pulses to the gate.
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30. A memory, comprising:
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a plurality of memory cells;
wherein at least one memory cell comprises;
a field effect transistor having a gate, the gate including a dielectric layer, wherein at least a portion of the dielectric layer is an organic dielectric, and a gate contact; and
a circuit having an output coupled to at least two of the gate contacts, the circuit configured to produce one or more storage voltage pulses that cause charge storage in the gate dielectric. - View Dependent Claims (31, 32)
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Specification