Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
First Claim
1. A method for releasing a micromechanical structure, comprising:
- providing a substrate;
providing a sacrificial material directly or indirectly on the substrate;
providing one or more micromechanical structural layers on the sacrificial material;
performing a first etch to remove a portion of the sacrificial material, the first etch comprising providing an etchant and energizing the etchant so as to allow the etchant to physically, or chemically and physically, remove the portion of the sacrificial material;
performing a second etch to remove additional sacrificial material, the second etch comprising providing an etchant that chemically but not physically etches the additional sacrificial material.
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Accused Products
Abstract
An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.
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Citations
111 Claims
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1. A method for releasing a micromechanical structure, comprising:
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providing a substrate;
providing a sacrificial material directly or indirectly on the substrate;
providing one or more micromechanical structural layers on the sacrificial material;
performing a first etch to remove a portion of the sacrificial material, the first etch comprising providing an etchant and energizing the etchant so as to allow the etchant to physically, or chemically and physically, remove the portion of the sacrificial material;
performing a second etch to remove additional sacrificial material, the second etch comprising providing an etchant that chemically but not physically etches the additional sacrificial material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50)
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51. A method for etching a material on or within a substrate, comprising:
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performing a first etch to remove a portion of the material, the first etch comprising providing an etchant and energizing the etchant so as to allow the etchant to physically, or chemically and physically, remove the portion of the material;
performing a second etch to remove additional silicon, the second etch comprising providing an etchant that chemically but not physically etches the additional material. - View Dependent Claims (52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100)
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101. An apparatus comprising:
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an etching chamber;
connected to the etching chamber, a first source of etchant capable of etching in a plasma state; and
connected to the etching chamber, a second source of etchant different from the first source of etchant and capable of etching in a non-plasma state. - View Dependent Claims (102, 103, 104, 105, 106, 107, 108, 109, 110, 111)
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Specification