Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
First Claim
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1. A process chamber used in the manufacture of a semiconductor device for etching a material on a semiconductor wafer using plasma, the process chamber comprising:
- an electrostatic chuck for holding the semiconductor wafer; and
an annular edge ring, which surrounds a side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position, having a first side which faces the side of the semiconductor wafer, wherein a distance between the side of the semiconductor wafer and the first side is less than 0.15 mm.
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Abstract
A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
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Citations
42 Claims
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1. A process chamber used in the manufacture of a semiconductor device for etching a material on a semiconductor wafer using plasma, the process chamber comprising:
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an electrostatic chuck for holding the semiconductor wafer; and
an annular edge ring, which surrounds a side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position, having a first side which faces the side of the semiconductor wafer, wherein a distance between the side of the semiconductor wafer and the first side is less than 0.15 mm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A process chamber used in the manufacture of a semiconductor device for etching a material on a semiconductor wafer using plasma, the process chamber comprising:
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an electrostatic chuck for holding the semiconductor wafer; and
an annular focus ring, which surrounds a side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position and to make the plasma distribution uniform by drawing the plasma, having a first side which faces the side of the semiconductor wafer and contacts the side of the semiconductor wafer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 25, 26, 27, 29, 30)
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24. A process chamber used in the manufacture of a semiconductor device for etching a material on a semiconductor wafer using plasma, the process chamber comprising:
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an electrostatic chuck for holding the semiconductor wafer;
a gas supply conduit, installed facing an upper surface of the semiconductor wafer, for supplying reaction gases to a space over the semiconductor wafer, wherein the gas supply conduit is slanted at a first angle with respect to the vertical direction such that relatively more reaction gases are provided to a center of the semiconductor wafer than to a periphery of the semiconductor wafer; and
a radio frequency power source for forming plasma in the space over the semiconductor wafer by ionizing the supplied reaction gases.
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28. A process chamber used in the manufacture of a semiconductor device for etching a material on a semiconductor wafer using plasma, the process chamber comprising:
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an electrostatic chuck for holding the semiconductor wafer; and
a slit valve, attached to a sidewall of the process chamber and separated by a first distance from the electrostatic chuck, having a wafer transfer path through which the semiconductor wafer placed above the electrostatic chuck can be loaded or unloaded in the horizontal direction from or to the outside of the process chamber, wherein the temperature of the slit valve is maintained at a higher temperature than the sidewall of the process chamber during an etching process.
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31. A process chamber used in the manufacture of a semiconductor device for depositing a material on a semiconductor wafer, the process chamber comprising:
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an electrostatic chuck for holding the semiconductor wafer;
a heater, installed below the wafer chuck, for supplying heat;
a guide ring for guiding the semiconductor wafer, the guide ring installed at the edge of an upper surface of the wafer chuck and separated from the chuck by about 15-25 mm. - View Dependent Claims (32, 33, 35, 36, 37, 39, 40)
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34. A method of making a semiconductor device, comprising:
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placing a semiconductor wafer on a wafer chuck such that a portion of the wafer contacts one of;
(a) an edge ring which prevents lateral deviation of the wafer, and (b) a focus ring which makes plasma distribution uniform above the wafer; and
etching a layer over the wafer or a portion of the wafer.
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38. A method of making a semiconductor device, comprising:
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placing a semiconductor wafer on a wafer chuck;
supplying an etching gas toward the wafer at a first angle with respect to the vertical direction such that relatively more etching gas is provided to the center of the wafer than to the periphery of the wafer;
ionizing the etching gas to form an etching gas plasma; and
etching a layer over the wafer or a portion of the wafer.
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41. A method of making a semiconductor device, comprising:
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loading a semiconductor wafer on a wafer chuck through a wafer transfer path of a slit valve, which is attached to a sidewall of a process chamber and separated by a first distance from the wafer chuck; and
etching a layer over the wafer or a portion of the wafer while maintaining the temperature of the slit valve at a higher temperature than the sidewall of the process chamber during the etching. - View Dependent Claims (42)
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Specification