Semiconductor device and method of fabricating same
First Claim
1. An electroluminescence device comprising:
- a substrate having an insulating surface;
a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least one gate electrode adjacent to the active layer with a gate insulating film with interposed therebetween;
a leveled insulating film provided over the thin film transistors; and
a pixel electrode provided on the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively, wherein the semiconductor film comprises a plurality of radial crystal grains of silicon through the whole area of the semiconductor film, and wherein crystal growth directions in the active layers differs from one of the plurality of thin film transistors to another, respectively.
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Abstract
There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.
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Citations
47 Claims
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1. An electroluminescence device comprising:
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a substrate having an insulating surface;
a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least one gate electrode adjacent to the active layer with a gate insulating film with interposed therebetween;
a leveled insulating film provided over the thin film transistors; and
a pixel electrode provided on the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively, wherein the semiconductor film comprises a plurality of radial crystal grains of silicon through the whole area of the semiconductor film, and wherein crystal growth directions in the active layers differs from one of the plurality of thin film transistors to another, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An electroluminescence device comprising:
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a substrate having an insulating surface;
a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least one gate electrode adjacent to the active layer with a gate insulating film with interposed therebetween;
a leveled insulating film provided over the thin film transistors; and
a pixel electrode provided on the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively, wherein the semiconductor film comprises a plurality of radial crystal grains of silicon through the whole area of the semiconductor film, and wherein directions of anisotropy of crystal structures in active layers differs from one of said plurality of thin film transistors to another, respectively. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 18, 19, 20, 21, 22, 23, 24, 26, 27, 28, 29, 30, 31, 32)
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17. An electroluminescence device comprising:
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a substrate having an insulating surface;
a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least one gate electrode adjacent to the active layer with a gate insulating film with interposed therebetween;
a leveled insulating film provided over the thin film transistors; and
a pixel electrode provided on the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively, wherein said semiconductor film comprises a plurality of crystal grains of silicon through the whole area of the semiconductor film, each of said crystal grains growing radially from each of a plurality of points distributed through the whole surface of said semiconductor film, and wherein crystal growth directions in said active layers differs from one of said plurality of thin film transistors to another, respectively.
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25. An electroluminescence device comprising:
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a substrate having an insulating surface;
a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least one gate electrode adjacent to the active layer with a gate insulating film with interposed therebetween;
a leveled insulating film provided over the thin film transistors; and
a pixel electrode provided on the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively, wherein said semiconductor film comprises a plurality of crystal grains of silicon through the whole area of the semiconductor film, each of said crystal grains growing radially from each of a plurality of points distributed through the whole surface of said semiconductor film, and wherein directions of anisotropy of crystal structures in active layers differs from one of said plurality of thin film transistors to another, respectively.
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33. A portable intelligent terminal having an electroluminescence device, comprising:
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a substrate having an insulating surface;
a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least one gate electrode adjacent to the active layer with a gate insulating film with interposed therebetween;
a leveled insulating film provided over the thin film transistors; and
a pixel electrode provided on the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively. - View Dependent Claims (34, 35, 36, 37, 39, 40, 41, 42)
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38. A car navigation system having an electroluminescence device, comprising:
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a substrate having an insulating surface;
a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least one gate electrode adjacent to the active layer with a gate insulating film with interposed therebetween;
a leveled insulating film provided over the thin film transistors; and
a pixel electrode provided on the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively.
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43. A mobile telephone having an electroluminescence device, comprising:
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a substrate having an insulating surface;
a plurality of thin film transistors over the substrate, each thin film transistor having an active layer formed by patterning a semiconductor film over the substrate and at least one gate electrode adjacent to the active layer with a gate insulating film with interposed therebetween;
a leveled insulating film provided over the thin film transistors; and
a pixel electrode provided on the leveled insulating film, the pixel electrode electrically connected to the thin film transistors, respectively. - View Dependent Claims (44, 45, 46, 47)
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Specification