Three dimensional programmable device and method for fabricating the same
First Claim
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1. An apparatus comprising:
- in a plurality of planes over a circuit level substrate, individual programmable cells, each cell comprising a volume of programmable material;
at least one contact; and
an electrode coupled to the volume of programmable material and disposed between the volume of programmable material and the at least one contact, the electrode comprising at least two portions having different resistance values.
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Abstract
A three-dimensional memory device having polycrystalline silicon diode isolation elements for phase change memory cells and method for fabricating the same. The memory device includes a plurality of stacked memory cells to form a three-dimensional memory array. The polycrystalline silicon diode element selects the phase change memory cell. The memory device is fabricated by forming a plurality of phase change memory cells and diode isolation elements on a base layer. Additional layers of memory cells and isolation elements are formed over the initial layer.
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Citations
23 Claims
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1. An apparatus comprising:
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in a plurality of planes over a circuit level substrate, individual programmable cells, each cell comprising a volume of programmable material;
at least one contact; and
an electrode coupled to the volume of programmable material and disposed between the volume of programmable material and the at least one contact, the electrode comprising at least two portions having different resistance values. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 15)
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10. A memory device comprising:
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a plurality of programmable cells in a stacked configuration on a circuit level substrate, each of the plurality of programmable cells comprising a volume of programmable material disposed between a first contact and a second contact, the programmable material coupled to one of the first contact and the second contact by an electrode, wherein at least one of the first contact and the second contact is shared between adjacent programmable cells. - View Dependent Claims (11, 12, 13, 16, 17, 18, 20, 21, 22, 23)
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14. A method comprising:
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forming an array of contacts over a circuit level substrate, a pair of the array of contacts defining a programmable cell plane there being a plurality of cell planes;
forming between contacts a volume of programmable material coupled to at least one contact by an electrode; and
modifying the resistance value of less than the entire portion of the electrode.
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19. An apparatus comprising:
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a bus;
a processor coupled to the bus;
a wireless interface coupled to the bus;
a memory device including a plurality of planes over a circuit level substrate, individual programmable cells, each cell comprising a volume of programmable material, at least contact; and
an electrode couple to the volume of programmable material, and disposed between the volume of programmable material and the at least one contact, the electrode comprising at least two portions having different resistance values.
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Specification